Allicdata Part #: | NSVJ2394SA3T1G-ND |
Manufacturer Part#: |
NSVJ2394SA3T1G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IC JFET N-CH LNA SC59-3 |
More Detail: | JFET N-Channel 15V 50mA 200mW Surface Mount SC-59-... |
DataSheet: | NSVJ2394SA3T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.15758 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 15V |
Drain to Source Voltage (Vdss): | 15V |
Current - Drain (Idss) @ Vds (Vgs=0): | 32mA @ 5V |
Current Drain (Id) - Max: | 50mA |
Voltage - Cutoff (VGS off) @ Id: | 700mV @ 100µA |
Input Capacitance (Ciss) (Max) @ Vds: | 10pF @ 5V |
Power - Max: | 200mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SC-59-3/CP3 |
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JFET transistors (Junction Gate Field-Effect Transistors) are a type of unipolar device, meaning that current flow is composed of a single type of charge carrier, as opposed to other transistors like BJTs (Bipolar Junction Transistors) in which current is composed of both electrons and holes. JFETs are normally-on transistors, meaning that when no voltage is applied to the gate, current is allowed to pass through the channel between the source and the drain. The NSVJ2394SA3T1G is a N-channel enhancement-mode JFET transistor, with a maximum drain current of 0.5A, a maximum drain-source voltage of 60V, and a maximum VGS of ±20V.
The NSVJ2394SA3T1G JFET transistor is used in a wide range of applications, such as linear and audio amplifiers, voltage followers, bridges, and many other circuits. It is also used in power switching circuits, due to its ability to switch at high speeds and low power losses. This makes JFETs the ideal choice for many power electronic design applications.
When a voltage is applied to the gate, the gate-source junction creates an electric field that depletes some of the charge carriers (holes or electrons) within the channel. This reduces the current that can flow between the source and the drain of the transistor, making it function as a variable resistor. This operating principle of the NSVJ2394SA3T1G is the same for all JFET transistors.
The NSVJ2394SA3T1G is an enhancement-mode JFET, meaning that a certain voltage must be applied to the gate in order to turn the transistor on and allow current to flow. This is the opposite of depletion-mode JFETs, in which current is blocked when a certain voltage is applied to the gate. The NSVJ2394SA3T1G is controlled by the voltage between its gate and source, and the current flowing through the channel between the source and the drain is determined by this voltage.
In summary, the NSVJ2394SA3T1G is a N-channel enhancement-mode JFET transistor with a maximum drain current of 0.5A and a maximum drain-source voltage of 60V. It is used in a wide range of applications such as linear and audio amplifiers, voltage followers, bridges, and many other circuits. Its working principle is similar to other JFET transistors: when a voltage is applied to the gate, the gate-source junction creates an electric field which depletes some of the charge carriers within the channel, thus reducing the current that can flow between the source and the drain of the transistor.
The specific data is subject to PDF, and the above content is for reference
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