NSVJ3910SB3T1G Discrete Semiconductor Products |
|
Allicdata Part #: | NSVJ3910SB3T1GOSTR-ND |
Manufacturer Part#: |
NSVJ3910SB3T1G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IC JFET N-CH 25V 50MA 3CPH |
More Detail: | JFET N-Channel 25V 50mA 400mW Surface Mount 3-CPH |
DataSheet: | NSVJ3910SB3T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.15758 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Drain to Source Voltage (Vdss): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 20mA @ 5V |
Current Drain (Id) - Max: | 50mA |
Voltage - Cutoff (VGS off) @ Id: | 600mV @ 100µA |
Input Capacitance (Ciss) (Max) @ Vds: | 6pF @ 5V |
Power - Max: | 400mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | 3-CPH |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NSVJ3910SB3T1G application field and working principle
NSVJ3910SB3T1G transistor is classified to Transistors - JFETs, which has low power implementation and high power implementation. As a family of unipolar field-effect transistors, JFETs works when small electric current controls a larger electric current. This type of transistor has the advantage of minimum ON-state resistance and immunity from thermal runaway. It also has the feature of high impedance input stages, excellent noise figure, very low power dissipation and common source current amplification.
NSVJ3910SB3T1G has many applications in power supplies, logic gates, switches, audio amplifiers, DC/DC converters, voltage regulators, remote control systems, etc. Since the transistors are small and low power, they are often used in domestic appliances and portable devices. They are also widely used in high frequency, low power, low breakdown voltage and specific applications like switch mode power supplies.
Working principle of NSVJ3910SB3T1G is that channel is created between the source and drain when a positive gate voltage is applied. This creates an inversion layer that depletes minority carriers and causes an electric current to flow between the drain and source. The electric current is proportional to the gate voltage, which is referred to as transconductance. The flow of electric current is limited by pn junctions present at the drain and source of the transistor. This in turn changes the electrical properties of the transistor, like block input current and drain current.
The NSVJ3910SB3T1G features high frequency (DC - 200MHz), low power consumption(33mA@4.0V), low voltage operation, improved noise figure and low distortion. It is also suitable for use in any application where a low power, high frequency and low distortion transistor is needed, like switch mode power supplies, audio amplifiers, etc. It also features enhanced performance over its predecessors, such as improved transient response and enhanced noise immunity. It is capable of providing excellent performance while still consuming low levels of power in most applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NSVJ3557SA3T1G | ON Semicondu... | 0.16 $ | 1000 | MOSFET N-CH 15V 32MA SC59... |
NSVJ3910SB3T1G | ON Semicondu... | 0.18 $ | 1000 | IC JFET N-CH 25V 50MA 3CP... |
NSVJ2394SA3T1G | ON Semicondu... | 0.18 $ | 1000 | IC JFET N-CH LNA SC59-3JF... |
NSVJ6904DSB6T1G | ON Semicondu... | 0.3 $ | 1000 | JFET -25V, 20 TO 40MA DUA... |
TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...
TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...
TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...
TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...
TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...
TRANSISTOR JFET 8PLLCCTRANSISTOR JFET 8P...