NSVT3946DP6T5G Allicdata Electronics
Allicdata Part #:

NSVT3946DP6T5G-ND

Manufacturer Part#:

NSVT3946DP6T5G

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN/PNP 40V 0.2A SOT963
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA ...
DataSheet: NSVT3946DP6T5G datasheetNSVT3946DP6T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.07895
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 100 @ 10mA, 1V
Power - Max: 350mW
Frequency - Transition: 200MHz, 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963
Description

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The NSVT3946DP6T5G can be classified under the group of transistors known as bipolar junction transistors (BJT), and within the understanding of transistor arrays. This particular type of transistor incorporates the physical shape of an analog multiplexer which is fundamentally composed a number of input channels, selection inputs, and a single output channel in a single, somewhat larger sized chip. It is an ideal choice for applications that require more than one input, such as switching and multiplexing, because it combines them all together in one single device.

A bipolar junction transistor is an active device normally built with three separate layers. These layers will have different doping when looked at under a microscope, with one being p-type, one being n-type, and the middle one being a very thin layer between them. The two outside layers are connected to two wires, one coming from the power source and the other connected to ground, and the middle layer is connected to the control element which is typically a diode controlling the presence of voltage or current. This control element is what is known as the base, and depending upon the conduction or non-conduction of the base determines whether the transistor is closed or open.

In addition to the previously mentioned multiplexer functionality, the NSVT3946DP6T5G offers a vast array of features to enable a broad range of applications. These features include the ability to perform multiple system functions simultaneously and a noise detection and cancellation feature to ensure accurate input signals. There is also the option of increasing the security of the device with the use of the latest secure coding technology. Additionally, the power consumption of the device is kept to respectable levels while still providing quality performance. The overall design of the device also ensures that it operates in quick succession thanks to its simplified circuit architecture.

Another feature of the NSVT3946DP6T5G is its robust working principle. This is based on the physical conditions that are computed through the various layers, all connected to a single input source and output channel. When a voltage or current of the correct ratios is applied to the transistor, it enables two separate, controlled pathways that are modulated by the conduction of the base. This allows for one of the pathways to be open and allowing for the current to flow directly into the output channel, and the other pathway remains closed and preventing the current to pass through.

In summary, the NSVT3946DP6T5G is an incredibly versatile transistor array. It combines the features of a multiplexer along with a secure coding system and an efficient working principle to create a product capable of performing many tasks with utmost efficiency. It is truly a marvel of modern engineering, and an excellent choice for many applications requiring more than one input channel.

The specific data is subject to PDF, and the above content is for reference

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