NSVT3946DXV6T1G Allicdata Electronics
Allicdata Part #:

NSVT3946DXV6T1G-ND

Manufacturer Part#:

NSVT3946DXV6T1G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN/PNP 40V 0.2A SOT563
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 40V 200mA ...
DataSheet: NSVT3946DXV6T1G datasheetNSVT3946DXV6T1G Datasheet/PDF
Quantity: 1000
4000 +: $ 0.07204
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Power - Max: 500mW
Frequency - Transition: 300MHz, 250MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563
Description

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The NSVT3946DXV6T1G is a N-Channel Enhancement Mode Vertical DMOS FET Transistor Array, belonging to the class of transistors known as bipolar junction transistors (BJT) and, specifically, arrays. Owing to its wide variety of features, it is capable of a multitude of applications and can be used in various circuits and systems.

The NSVT3946 DXV6T1G comes in a TO-252 5-lead package and contains 3 transistors, each with a 1 ohm on-resistance, featuring an operating voltage of 1.5V-6V, an operating temperature of -55°C to +150°C and very low, threshold voltages of 2.2V-4V. This transistor array features very high level of integration and occupies very little board space. It\'s electrical characteristics include a low on-state drain-source resistance around 1 ohm, making it suitable for applications such as switching, linestages, audio amplifiers, power management and multiplexers.

The working principle of the NSVT3946 DXV6T1G is quite straightforward. Upon application of a gate voltage (VGS) to the gate terminal of the transistor, a channel is created between the drain and source terminals, allowing current to flow between these terminals. By controlling the gate voltage (VGS) with appropriate signals, the NSVT3946 DXV6T1G can be used to switch on and off electrical current, thus controlling the flow of electricity through the device.

In terms of applications, the NSVT3946 DXV6T1G is used in switching, linestages, audio amplifiers, power management, multiplexers and a wide variety of circuits. Its wide working voltage range makes it suitable for multiple applications and can be used as replacement for other transistors in existing circuits. It is also often used in systems and circuits where space is limited. As a result of its simple working principle, it can be incorporated in various designs for a variety of purposes.

In conclusion, the NSVT3946 DXV6T1G is an N-Channel Enhancement Mode Vertical DMOS FET Transistor Array which belongs to the class of bipolar junction transistors (BJT) and, specifically, arrays. It\'s features include a low on-state drain-source resistance around 1 ohm, an operating voltage of 1.5V-6V, an operating temperature of -55°C to +150°C and very low, threshold voltages of 2.2V-4V. Due to its capability to be switched on and off using appropriate signals, it can be used in multiple circuits and systems and can be used to perform switching, linestages, audio amplifiers, power management and multiplexers.

The specific data is subject to PDF, and the above content is for reference

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