Allicdata Part #: | NSVUMC2NT1G-ND |
Manufacturer Part#: |
NSVUMC2NT1G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP PREBIAS 0.15W SC70 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSVUMC2NT1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.07528 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | -- |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: | SC-88A (SC-70-5/SOT-353) |
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A NSVUMC2NT1G is a Pre-Biased Array of Bipolar Junction Transistors (BJT). This type of device has one or more transistors built into a single package. This makes it ideal for applications where the user needs to control multiple transistors with a single signal. The NSVUMC2NT1G is a two-channel BJT array, allowing two independent transistors to be controlled by one signal. It may also be used as a switch or amplifier.
The NSVUMC2NT1G employs a single-layer pre-bias technology that allows both transistors to be controlled simultaneously. This is an important feature, as it increases the efficiency of the device by reducing the power needed to switch the transistors. In addition, the pre-bias technology allows the device to have improved performance when operating at high temperatures.
The main advantage of the NSVUMC2NT1G is its ability to switch multiple transistors using a single signal. This is possible due to the device’s pre-biased architecture, which eliminates the need for separate power supplies to switch each transistor. This simplifies the circuit, reduces the number of components, and lowers the overall cost.
The NSVUMC2NT1G also offers a wide input voltage range, making it compatible with a variety of voltage sources. This ensures that the device operates reliably in a wide range of applications. It also has a high input impedance, meaning it can easily be driven by many signals.
The NSVUMC2NT1G’s output is open collector, meaning the transistors are controlled by the collector current, rather than the input voltage. This helps prevent damage to the device from overvoltage or mismatched load conditions. Furthermore, the device is protected from latch up, meaning it does not suffer from parasitic transistor effects.
The NSVUMC2NT1G is well-suited for many applications and is widely used in the industrial and automotive sectors for control and switching applications. It is also widely used in consumer electronics, where it may be used to generate multiple power supplies from a single source.
In summary, the NSVUMC2NT1G is an ideal choice for applications that require multiple transistors to be controlled using a single signal. It offers the advantage of single-layer pre-bias technology, a wide input voltage range, and high input impedance. In addition, the device is protected from latch up and overvoltage, and its output is open collector. This makes the device well-suited for many applications, including product design and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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