| Allicdata Part #: | NTLLD4951NFTWG-ND |
| Manufacturer Part#: |
NTLLD4951NFTWG |
| Price: | $ 0.85 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET 2N-CH 30V 5.5A/6.3A WDFN8 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 5... |
| DataSheet: | NTLLD4951NFTWG Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.78246 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | 2 N-Channel (Dual) Asymmetrical |
| FET Feature: | Standard |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 5.5A, 6.3A |
| Rds On (Max) @ Id, Vgs: | 17.4 mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 605pF @ 15V |
| Power - Max: | 800mW, 810mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerWDFN |
| Supplier Device Package: | 8-WDFN (3x3) |
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The NTLLD4951NFTWG is a device that is able to combine the power of MOSFETs and FETs, into a single array structure. This device offers high current, low on resistance, and fast switching speed. It is suitable for many applications, and is ideal for applications that require a higher power output with a reduced area module.
The NTLLD4951NFTWG is part of a series of devices that are specifically designed for applications in systems where a high level of power needs to be efficiently managed. This device can be used in a wide range of automotive and industrial applications, such as power converters, power distribution, and motor control.
The NTLLD4951NFTWG is a complex device. It is designed to have a variety of components, including transistors, diodes, resistors, capacitors, and other components. The device is composed of four major parts, namely the N-channel MOSFETs, FET, and the logic array. These four parts are combined in order to create an array, which is then connected to some of the external components.
The N-channel MOSFETs are used to control the switching of the array. These MOSFETs can be used to either sink current or source current, depending on the configuration. The FETs are used for voltage regulation, and their resistance characteristics determine the amount of current that flows through the array. The logic array is responsible for controlling the current flows and is responsible for switching between the two states.
The NTLLD4951NFTWG uses a combination of FETs and N-channel MOSFETs, in order to create an array of transistors which is connected to external components. This array is used to regulate voltage, as well as provide current control, to ensure a stable and uniform current flow throughout the device.
In terms of working principle, the NTLLD4951NFTWG is designed to be able to perform a number of tasks. It can be used to control the voltage, current, and power of a device, as well as to control the switching of the array. The device is designed to work in both directions, and its purpose is to provide a more efficient form of power management, which reduces power loss and improves efficiency.
The NTLLD4951NFTWG is also useful for system applications that require high power output, but with a reduced area module. This device offers high current, low on resistance, and fast switching speed, which makes it ideal for many applications. It is suitable for many automotive and industrial applications, such as power converters, power distribution, and motor control.
In conclusion, the NTLLD4951NFTWG is a device that combines the power of FETs and MOSFETs to create a single array structure. This device is designed to work in both directions, which ensures a stable and uniform current flow throughout the device. It is suitable for many applications, and is ideal for applications that require high power output with a reduced area module.
The specific data is subject to PDF, and the above content is for reference
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NTLLD4951NFTWG Datasheet/PDF