NTLTD7900ZR2G Allicdata Electronics

NTLTD7900ZR2G Discrete Semiconductor Products

Allicdata Part #:

NTLTD7900ZR2GOSTR-ND

Manufacturer Part#:

NTLTD7900ZR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 20V 6A 8MICRO
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 6A 1.5W Surfac...
DataSheet: NTLTD7900ZR2G datasheetNTLTD7900ZR2G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: NTLTD7900Z
Supplier Device Package: Micro8™
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.5W
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 16V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NTLTD7900ZR2G is a type of FET (Field Effect Transistor) array, and is commonly used in the production of high-frequency, high-current integrated circuits. It is commonly used in power amplifier design, power MOSFET applications, analog switch/multiplexer/demultiplexer control applications and other applications that require precise control of FETs. The NTLTD7900ZR2G has three operating modes: discrete, signal, and gate-drive.

The most common implementation of the NTLTD7900ZR2G is within a discrete mode in which the device can act as a single source and sink current, switching between the two states in response to an input signal. This can be used to drive various types of switches, providing precise control of the signals they in turn control. In its signal mode, the NTLTD7900ZR2G can also provide precise control of FETs, driving them between their on and off states in response to an input signal. This can be valuable in controlling the states of complex, integrated circuits.

The NTLTD7900ZR2G can also be implemented in the gate-drive mode. In this mode, the device acts as a voltage-generating circuit, outputting a precisely-controlled voltage in response to changes in an input signal level. This can be used to drive the gates of power MOSFETs, allowing them to very quickly switch between their on and off states. This makes the NTLTD7900ZR2G ideal for high-speed applications, where precise control of power MOSFET signals is required in order to maintain optimal operation.

The NTLTD7900ZR2G can also be used in its discrete mode in combination with other devices to create multiplexers and demultiplexers. It is well-suited for this application due to its ability to precisely control FETs, allowing for precise switching between states and allowing the design of a device that can multiplex multiple input signals into one output, or demultiplex one input into multiple outputs without crosstalk noise.

The NTLTD7900ZR2G is an effective and versatile FET array well-suited to many different applications. Its ability to multiplex/demultiplex signals and precisely control currents makes it ideal for applications requiring high-speed, high-current control. Combined with its small size and low power consumption, this makes it a great choice for use in various integrated circuit applications.

The specific data is subject to PDF, and the above content is for reference

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