NTS260ESFT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTS260ESFT1GOSTR-ND |
Manufacturer Part#: |
NTS260ESFT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE SCHOTTKY 60V 2A SOD123FL |
More Detail: | Diode Schottky 60V 2A Surface Mount SOD-123FL |
DataSheet: | NTS260ESFT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 60V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 650mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 12µA @ 60V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123F |
Supplier Device Package: | SOD-123FL |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes - Rectifiers - Single
The NTS260ESFT1G is a silicon power diode designed for applications that require a high-current, low-dropout voltage regulator. The device has a static drain-to-source on-state resistance of 0.12 ohms, which helps reduce the power consumption of the device and allows it to be used in high-current applications. The Schottky diode has a forward turn-on voltage of 3.25 V, which assists with the ultra-fast switching speed of the device.
The NTS260ESFT1G operates over a wide temperature range of -55 to +125 °C, making it ideal for applications where extreme temperatures occur. The device also has a very high surge current capability of up to 70 A for two milliseconds, which is beneficial for applications like solar power inverters and automotive applications. Additionally, the rough handling of installation does not affect the device’s operation.
The NTS260ESFT1G offers a wide range of applications, including power converters, power supplies, solar and wind energy converters, and motor control systems. This device is also suitable for use in automotive lighting, home UPS systems and industrial applications. As a power diode, the NTS260ESFT1G provides overvoltage protection and overcurrent protection, thus making it ideal for use in high-voltage, high-current applications.
Working Principle
The NTS260ESFT1G works by connecting the anode and cathode directly to the circuit, allowing current to flow in one direction only. The device has a Schottky diode, anode and cathode terminals, and the diode protects against transients, providing a fast response and preventing circuit damage. In addition, the NTS260ESFT1G also has a reverse blocking voltage feature, which prevents current from flowing in the wrong direction. This helps protect the device from damage due to overvoltage or reversed current.
The NTS260ESFT1G operates based on the principle of PN junction. The device has a P-type and an N-type silicon substrate which, when connected in a certain way, will allow current to flow in one direction only. As the current flows through the PN junction, it generates a voltage drop across the junction, which is known as the forward voltage drop. The device has a total on-state resistance, which helps ensure that the voltage drop across the junction remains constant.
The Nortek NTS260ESFT1G is suited for high-current applications due to its low forward voltage drop, fast switching speed and high surge current capability. The device is also resistant to reverse current and provides protection against transients and other overvoltage and reverse current issues. The device is also designed to operate in extreme environmental conditions, making it a great choice for applications in a variety of industries.
The specific data is subject to PDF, and the above content is for reference
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