NUP2114UCMR6T1G Circuit Protection |
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Allicdata Part #: | NUP2114UCMR6T1GOSTR-ND |
Manufacturer Part#: |
NUP2114UCMR6T1G |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | ON Semiconductor |
Short Description: | TVS DIODE 5V 10V 6TSOP |
More Detail: | N/A |
DataSheet: | NUP2114UCMR6T1G Datasheet/PDF |
Quantity: | 24000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Current - Peak Pulse (10/1000µs): | 8A (8/20µs) |
Base Part Number: | NUP2114 |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Capacitance @ Frequency: | 0.8pF @ 1MHz |
Applications: | Automotive |
Power Line Protection: | Yes |
Power - Peak Pulse: | -- |
Series: | Automotive, AEC-Q101 |
Voltage - Clamping (Max) @ Ipp: | 10V (Typ) |
Voltage - Breakdown (Min): | 5.5V |
Voltage - Reverse Standoff (Typ): | 5V (Max) |
Unidirectional Channels: | 2 |
Type: | Steering (Rail to Rail) |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The NUP2114UCMR6T1G device is a member of the TVS – Diodes family which provides an extra measure of protection to sensitive electronic components from transient over-voltage due to electrical fast transients (EFT), electromagnetic interference (EMI), or surge and power cross. This device with a peak pulse current of 3.5A comes in a SOT-23 package with a breakdown voltage of 6.0V.
This TVS – Diode device helps protect downstream components from electrical noise generated by switching applications such as whitepoint power supplies and automotive systems. It also helps reduce system-level EMC emissions. Due to its wide operating temperature range of -55C to +150C, this device works reliably in harsh environmental conditions. Additionally, its low capacitance of 0.85pF and low clamping voltage of 6.0V ensures reliable and rapid protection.
The NUP2114UCMR6T1G Field-Effect Transistor (FET) works on a bidirectional basis where the voltage breakdown characteristics differ in the forward and reverse bias directions. In forward bias, the device has a low on-state resistance which is improved by an N-Channel FET with an enhanced source-drain current. In reverse bias, the device has an avalanche breakdown. The resultant improved characteristics make the device suitable for automotive level surge applications.
The working principle of the NUP2114UCMR6T1G involves a reverse bias breakdown of the p-n junction diode between the drain and source. The reverse bias causes a flow of electrons from drain to source which are blocked by an avalanche effect. This buildup results in the device clamping the voltage and limiting the transient overload. The device features built-in ESD protection and EMI filtering.
The NUP2114UCMR6T1G was built to be used in a variety of applications due to its high surge capability and wide operating temperature range. These applications include, but are not limited to, automotive systems, factory power lines, PCs, peripherals, audiovisual equipment, and power supplies. This device is also suitable for use as a basic component in control assemblies or systems to protect them from high surges and high frequency voltage transients.
The NUP2114UCMR6T1G device is a multifaceted protection component that provides reliable protection from voltage transients while offering low on-state resistance and low capacitance. Its avalanche diode design improved characteristics make it suitable for applications in the automotive industry, while its wide operating temperature range ensures reliable performance in harsh conditions. It also features built in ESD protection and EMI filtering, making it a great choice as a basic component for control assemblies or systems that require protection.
The specific data is subject to PDF, and the above content is for reference
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