NUP2115LT3G Allicdata Electronics

NUP2115LT3G Circuit Protection

Allicdata Part #:

NUP2115LT3G-ND

Manufacturer Part#:

NUP2115LT3G

Price: $ 0.11
Product Category:

Circuit Protection

Manufacturer: ON Semiconductor
Short Description: TVS DIODE 24V 50V SOT23-3
More Detail: N/A
DataSheet: NUP2115LT3G datasheetNUP2115LT3G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
10000 +: $ 0.10314
Stock 1000Can Ship Immediately
$ 0.11
Specifications
Voltage - Clamping (Max) @ Ipp: 50V
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 10pF @ 1MHz
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 200W
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Series: Automotive, AEC-Q101
Voltage - Breakdown (Min): 26.2V
Voltage - Reverse Standoff (Typ): 24V (Min)
Bidirectional Channels: 2
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (transient voltage suppressor) diodes are used to protect sensitive electronic components from voltage spikes or other electrical transients. The NUP2115LT3G is one example of such a device. It is a high-voltage, low-capacitance three-terminal transient voltage suppressor diode designed for protection against electrostatic discharge (ESD). The three terminals are the anode (A), the cathode (C) and the guardline (G).

The NUP2115LT3G can be used for the protection of devices with sensitive circuits against high-energy ESD events, as defined by IEC 61000-4-2, such as computers, mobile phones, and other consumer electronics. It is designed for 8 kV contact-discharge performance and 15 kV air-discharge performance, with maximum clamping voltage of 43 V and maximum surge handling capability of 100 A per pulse.

The working principle of the NUP2115LT3G is based on avalanche breakdown, which occurs when a large electric field between the anode and the cathode (or guardline) causes the electrons in the depletion region to gain enough energy to create electron-hole pairs which, in turn, cause a rapid decrease in voltage across the device. This process, referred to as ‘avalanche’, reduces the applied voltage to the clamping voltage of the diode. This clamping voltage is determined by the breakdown voltage of the junction, the ionisation coefficient of the diode, the junction capacitance, and the load currents.

The NUP2115LT3G is packaged in an SOP-8 surface mount package and is available in a range of operating temperatures from -40°C to +85°C. It has a maximum dissipation of 200mW and a maximum reservoir capacitance of 1pF, making it suitable for high-frequency applications. Its low-capacitance design also ensures that it does not introduce significant loading on the device being protected.

In summary, the NUP2115LT3G is a three-terminal transient voltage suppressor diode designed for use in protection of devices against ESD. It features an avalanche breakdown mechanism, a low-capacitance design, and an SOP-8 form factor, making it ideal for high-frequency applications in consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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