NUS2045MNT1G Circuit Protection |
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Allicdata Part #: | NUS2045MNT1GOSTR-ND |
Manufacturer Part#: |
NUS2045MNT1G |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | ON Semiconductor |
Short Description: | IC OVP W/20V P-CH MOSFET DFN8 |
More Detail: | N/A |
DataSheet: | NUS2045MNT1G Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Clamping: | 7.08V |
Technology: | Mixed Technology |
Number of Circuits: | 1 |
Applications: | General Purpose |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN-EP (3.3x3.3) |
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Mixed technology refers to circuits that involve both active and passive components in order to reduce the overall cost, complexity and size of a given circuit. One example of mixed technology is the use of TVS (transient voltage suppressor diode) device in conjunction with a standard NMOS transistor. While a NMOS device alone is capable of providing protection against voltage surges, a TVS diode can provide additional protection. This combination of the two components can be found in the NUS2045MNT1G.
The NUS2045MNT1G is a TVS – Mixed Technology (MT) component that combines a 1000V NMOS transistor and a low-capacitance transient voltage suppressor (TVS) diode in a single unit. The MT component utilizes a high-voltage, high-gain NMOS transistor to provide high immunity from high voltage transients and the low capacitance TVS diode to provide additional protection against over voltage transients. Together, they act to form an efficient and cost effective protection circuit.
The NUS2045MNT1G application field is mainly used for computer data lines and telecommunications applications. In telecommunications applications, the NUS2045MNT1G protects the data cables from high transient over-voltage conditions which may result from faulty operations or inductive switching. In computers, it protects data lines from lightning, electrostatic discharge and electrical noise.
The NUS2045MNT1G working principle is relatively simple. The device works on the principles of voltage breakdown and reverse conduction. When the voltage exceeds a certain threshold, the transistor enables the diode to conduct the voltage spike. This, in turn, lowers the voltage on the data line. The diode also absorbs some of the energy released, dissipating it as heat.
The NUS2045MNT1G is designed with a high surge handling capability of up to 10kA (8/20µs pulse width). The low capacitance ensures that data can be passed with minimal disruption. Additionally, the low voltage breakdown ensures that the NUS2045MNT1G can operate with a wide range of input and output voltages.
The NUS2045MNT1G is a highly efficient and cost-effective protection circuit that utilizes both active and passive components to provide protection. The application field and working principle of NUS2045MNT1G make it an attractive option for protecting data lines and telecommunications cables against high transient overvoltage conditions. The high surge handling capability and low capacitance of the device make it an ideal choice for protecting computer data lines and telecommunications applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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NUS2045MNT1 | ON Semicondu... | 0.0 $ | 1000 | IC OVP W/20V P-CH MOSFET ... |
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