NUS2401SNT1 Discrete Semiconductor Products |
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Allicdata Part #: | NUS2401SNT1OSTR-ND |
Manufacturer Part#: |
NUS2401SNT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN/1PNP PREBIAS SC74 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN, 1 PNP -... |
DataSheet: | NUS2401SNT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Base Part Number: | NUS2401 |
Supplier Device Package: | SC-74 |
Package / Case: | SC-74, SOT-457 |
Mounting Type: | Surface Mount |
Power - Max: | 350mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA / 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 175 Ohms, 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 200mA |
Transistor Type: | 2 NPN, 1 PNP - Pre-Biased |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NUS2401SNT1 is a pre-biased array that consists of 8 general purpose NPN transistors in the surface-mount package. It is commonly applied to reduce electromagnetic interference (EMI) with low-noise or very high-speed circuits. It is a low-cost, low-power device and suitable for use in DC or AC applications. The NUS2401SNT1 is a versatile device and can be used in a wide range of applications such as switch debouncing, audio amplifiers, and modulators.
The NUS2401SNT1 is designed to provide excellent performance in EMI reduction. It can be used as an AC switch to reduce the peak voltage amplitude and therefore reduce the associated EMI. In addition, it is also useful for high-frequency applications like frequency doubling/quadrupling, as it offers low-distortion operation.
The NUS2401SNT1 consists of 8 NPN transistors that are connected in a Darlington configuration. Each transistor has an individual base, collector, and emitter. The configuration includes a built-in base resistor and emitter resistor, which are used to control the current flow through the transistor. The NUS2401SNT1 is designed to provide excellent performance in EMI reduction while consuming low power.
The working principle of the NUS2401SNT1 is based on the transfer of current from the emitter to the collector. When a voltage is applied to the base of the transistor, it injects current into the collector-emitter junction, which is dependent on the emitter current and beta of the transistor. The pre-biased nature of the the NUS2401SNT1 allows for current to continuously flow through the base resistor and the emitter resistor, and the current flow is proportional to the voltage across the two resistors. The current flow between the collector and the emitter is controlled by the base-emitter voltage, which can be adjusted using the base resistor. This enables the NUS2401SNT1 to be used as an AC switch and reduce EMI.
The NUS2401SNT1 applications are wide-ranging, and the device can be used in a variety of circuit designs. It can be used as a switch to reduce the peak voltage and associated EMI, making it suitable for high-speed and low-noise circuit designs. It is also suitable for frequency doubling/quadrupling applications, as it produces low distortion and low-power operation. The NUS2401SNT1 is also suitable for use in DC to AC converters, audio amplifiers, modulators, and more.
The NUS2401SNT1 is a low-cost, low-power device that is designed for EMI reduction and high frequency applications. Its pre-biased configuration allows for low distortion and low-power operation, making it suitable for a wide variety of circuit designs and applications. With its versatile nature and excellent performance, the NUS2401SNT1 is an ideal device for any application requiring pre-biased bipolar transistors.
The specific data is subject to PDF, and the above content is for reference
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