NVJD5121NT1G Discrete Semiconductor Products

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NVJD5121NT1G is a product of Vishay Intertechnology, and it belongs to the Transistors – FETs, MOSFETs – Arrays family. This type of device is a general-purpose array of N-channel junction field-effect transistors, fabricated in a process that combines the features of small signal transistors with the reliability and power handling capabilities of junction FETs. The advantages of using NVJD5121NT1G are its ability to switch very low voltages, providing superior on-resistance performance and temperature stability.

Application fields of NVJD5121NT1G include consumer electronics, power supplies, LED power systems, automotive, industrial, and medical applications. This type of device is well-suited in devices requiring superior EMI performance, system power control, and low-voltage applications.

The working principle of NVJD5121NT1G is based on Field-Effect Transistor (FET). This device allows electrons to pass through a region called a “channel”. The NVJD5121NT1G contains two types of FETs: N-channel and P-channel. N-channel FETs drain current from the source to the drain whereas P-channel FETs source current from the source to the drain. The working of the N-channel FET consists of a gate-source voltage (Vgs) at which a voltage difference between gate and source causes the N-channel FET to turn on. P-channel FET consists of a gate-source voltage (Vgs) at which a voltage difference between gate and source causes the P-channel FET to turn on. The NVJD5121NT1G consists of 12 N-channel and 12 P-channel FETs.

The NVJD5121NT1G arrays are fabricated utilizing a monolithic process combination which consists of small signal transistors with the reliability and power handling capabilities of junction FETs. This type of device operates by a charge which is shifted from the source of each transistor to the drain of the same transistor when a voltage is applied between the drain and source.

The N-channel MOSFET is capable of switching even very low voltages. They also require very little current. That makes them the ideal choice for low voltage and low current applications. The P-channel MOSFETs are the best choice for high voltage and high current applications. They can also be used in applications where switching speed is important. NVJD5121NT1G is suitable for applications such as consumer electronics, power supplies, LED power systems, automotive, industrial, and medical applications.

To sum up, NVJD5121NT1G is a general-purpose array of N-channel junction field-effect transistors, fabricated in a process that combines the features of small signal transistors with the reliability and power handling capabilities of junction FETs. This type of device is well-suited in devices requiring superior EMI performance, system power control, and low-voltage applications. The working principle of NVJD5121NT1G is based on FETs and it is suitable for applications such as consumer electronics, power supplies, LED power systems, automotive, industrial, and medical applications.

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