NVLJD4007NZTBG

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	245mA
Rds On (Max) @ Id, Vgs:	7 Ohm @ 125mA, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	20pF @ 5V
Power - Max:	755mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-WDFN Exposed Pad
Supplier Device Package:	6-WDFN (2x2)

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Introduction

The NVLJD4007NZTBG is part of a family of products known as Field Effect Transistor Arrays. These transistors are unique compared to other types of transistors in that the gate is made of metal rather than semiconductor material. As such, this makes the product ideal for applications which demand high performance with low power consumption. This article looks at the application fields and working principle of this device.

Application Field of the NVLJD4007NZTBG

The NVLJD4007NZTBG is widely used in space-limited, high performance control systems. Due to its low power consumption, it is also ideal for applications where power consumption is a key factor.The NVLJD4007NZTBGis also widely used in automotive, power, communications and industrial control applications. This is due to the device\'s high current and voltage gains, as well as a high rise and fall times.The NVLJD4007NZTBG is also extremely reliable, with a lifetime rated at 25 years. This makes it ideal for long-term applications. In addition, it has a low gate temperature rise of 2V, which allows for greater reliability and dependability.

Working Principle

The NVLJD4007NZTBG works on the principle of field-effect transistor technology. In simple terms, this means that an electric field is used to control the current flow in a transistor.The NVLJD4007NZTBG consists of two transistors that are integrated together to create a dual gate FET. This device is also known as a BiMOSFET (Bipolar Metal-oxidesemiconductor FET).The working principle of this device is based on the fact that when a gate voltage is applied and the source and drain contacts remain at the same voltage, a conduction current flows through the device. This results in a voltage drop across the device, and this voltage drop is what is used to control the current flow in the device.

Conclusion

The NVLJD4007NZTBG is a field effect transistor array that allows for high performance with low power consumption. It is widely used in a variety of applications, including automotive, power, communications and industrial control. The working principle of the device is based on the fact that when a gate voltage is applied and the source and drain contacts remain at the same voltage, a conduction current flows through the device. This results in a voltage drop across the device, which is used to control the current. It is a reliable device with a lifetime rated at 25 years, making it ideal for long-term applications.

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