NX1029X,115 Discrete Semiconductor Products |
|
Allicdata Part #: | 1727-1277-2-ND |
Manufacturer Part#: |
NX1029X,115 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N/P-CH 60V/50V SOT666 |
More Detail: | Mosfet Array N and P-Channel 60V, 50V 330mA, 170mA... |
DataSheet: | NX1029X,115 Datasheet/PDF |
Quantity: | 20000 |
4000 +: | $ 0.10275 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V, 50V |
Current - Continuous Drain (Id) @ 25°C: | 330mA, 170mA |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.35nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 36pF @ 25V |
Power - Max: | 500mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NX1029X,115 is a device that belongs to the class of transistors, specifically field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). It is also referred to as an array, which is a type of integrated circuit (IC) that is made up of multiple transistors, resistors, and/or other components mounted on a single substrate.
The NX1029X,115 is an advanced high-density, low on-resistance, side-action discrete power MOSFET array. It contains 4 independent devices within the one package and can be used for both analog and high-frequency applications, such as high-performance switching power amplifiers and driver circuits.
The main feature of the NX1029X,115 is its ability to reduce power dissipation and increase the efficiency of the circuit being used. It has a very low drain-to-source on-resistance and is able to provide high switching speeds and low gate-charge.
The NX1029X,115 is also very flexible, as it can be used in a wide range of applications and is ideal for high-frequency, high-power and analog applications where fast switching and low-noise performance is highly desirable.
The NX1029X,115\'s working principle is based on that of a MOSFET. A MOSFET is an type of field-effect transistor (FET) in which the electric field between the source and drain terminals is controlled by the voltage applied to a central gate. The MOSFET\'s gate is the controlling terminal of the device, and is managed using the surrounding circuitry. A current between the drain and source is enabled when the gate is appropriately activated, which adds a resistance to the device.
When a voltage is applied to the gate terminal of the NX1029X,115, it creates an inversion layer between the source and drain terminals. This inversion layer acts as a switch, enabling or disabling the flow of current between the drain and source terminals. By controlling the voltage level of the gate voltage, the on-resistance of the device can be manipulated.
The NX1029X,115 is capable of providing very low on-resistance and is able to provide an extremely fast switching speed due to its advanced high-density design. It is able to switch at frequencies of up to 100MHz and is ideal for use in high-frequency, high-power and analog applications, where fast switching and low-noise performance is highly desirable. It is also able to reduce the power dissipation of the circuit, which increases the efficiency.
The NX1029X,115 is an extremely versatile device, as it can be used in a variety of applications and can be tailored to meet the specific needs of the circuit. It is widely used in a range of applications, including motor control, high-frequency switching regulators, and power supplies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NX1029X,115 | Nexperia USA... | 0.11 $ | 20000 | MOSFET N/P-CH 60V/50V SOT... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...