NX1029X,115 Allicdata Electronics

NX1029X,115 Discrete Semiconductor Products

Allicdata Part #:

1727-1277-2-ND

Manufacturer Part#:

NX1029X,115

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N/P-CH 60V/50V SOT666
More Detail: Mosfet Array N and P-Channel 60V, 50V 330mA, 170mA...
DataSheet: NX1029X,115 datasheetNX1029X,115 Datasheet/PDF
Quantity: 20000
4000 +: $ 0.10275
Stock 20000Can Ship Immediately
$ 0.11
Specifications
Series: Automotive, AEC-Q101, TrenchMOS™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 330mA, 170mA
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Description

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The NX1029X,115 is a device that belongs to the class of transistors, specifically field-effect transistors (FETs) and metal-oxide-semiconductor FETs (MOSFETs). It is also referred to as an array, which is a type of integrated circuit (IC) that is made up of multiple transistors, resistors, and/or other components mounted on a single substrate.

The NX1029X,115 is an advanced high-density, low on-resistance, side-action discrete power MOSFET array. It contains 4 independent devices within the one package and can be used for both analog and high-frequency applications, such as high-performance switching power amplifiers and driver circuits.

The main feature of the NX1029X,115 is its ability to reduce power dissipation and increase the efficiency of the circuit being used. It has a very low drain-to-source on-resistance and is able to provide high switching speeds and low gate-charge.

The NX1029X,115 is also very flexible, as it can be used in a wide range of applications and is ideal for high-frequency, high-power and analog applications where fast switching and low-noise performance is highly desirable.

The NX1029X,115\'s working principle is based on that of a MOSFET. A MOSFET is an type of field-effect transistor (FET) in which the electric field between the source and drain terminals is controlled by the voltage applied to a central gate. The MOSFET\'s gate is the controlling terminal of the device, and is managed using the surrounding circuitry. A current between the drain and source is enabled when the gate is appropriately activated, which adds a resistance to the device.

When a voltage is applied to the gate terminal of the NX1029X,115, it creates an inversion layer between the source and drain terminals. This inversion layer acts as a switch, enabling or disabling the flow of current between the drain and source terminals. By controlling the voltage level of the gate voltage, the on-resistance of the device can be manipulated.

The NX1029X,115 is capable of providing very low on-resistance and is able to provide an extremely fast switching speed due to its advanced high-density design. It is able to switch at frequencies of up to 100MHz and is ideal for use in high-frequency, high-power and analog applications, where fast switching and low-noise performance is highly desirable. It is also able to reduce the power dissipation of the circuit, which increases the efficiency.

The NX1029X,115 is an extremely versatile device, as it can be used in a variety of applications and can be tailored to meet the specific needs of the circuit. It is widely used in a range of applications, including motor control, high-frequency switching regulators, and power supplies.

The specific data is subject to PDF, and the above content is for reference

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