NX138AKSF Allicdata Electronics
Allicdata Part #:

NX138AKSF-ND

Manufacturer Part#:

NX138AKSF

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2 N-CH 60V 170MA SOT363
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 170mA (Ta) 1.3...
DataSheet: NX138AKSF datasheetNX138AKSF Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03399
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 170mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Power - Max: 1.33W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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NX138AKSF is a high-power MOSFET array manufactured by International Rectifier. It comprises of two arrays of four N-channel MOSFETs connected in parallel and a single P-channel MOSFET connected in series with the source of each N-channel MOSFET. The device primarily finds usage in the power supply control, power management and motor control circuits due to its low distortion performance, low on-resistance and high efficiency ratings.

Applications of NX138AKSF include power supplies, high-efficiency DC to DC converters, motor control, switching and power management in server, computer, laptop and other electronic applications.

The working principle of NX138AKSF MOSFET array is based on the conduction of electrons from the drain to the source over the channel. When a gate-source voltage is applied with the gate connected to the drain, it creates an electric field across the channel allowing electrons to move from the drain to the source. As the device is bidirectional, it can also act as an arrester. This allows current to move from the source to the drain which can be used to control the output voltage.

The array consists of two four-N-channel MOSFETs connected in parallel and a single P-channel MOSFET connected in series with the source of each N-channel MOSFET. The on-resistance of the NX138AKSF allows low RDS(on) and low heat dissipation. It also exhibits high switching speeds, making it suitable for control and switching applications.

In terms of power ratings, each N-channel MOSFET in the array can stand up to 15A of continuous drain current and 12V DC at the gate-source potential. The P-channel has a maximum drain current rating of 5A. The maximum safe operating area for each of the N-channel and P-channel MOSFETs are limited to 100V and 20V respectively.

NX138AKSF is a high power MOSFET array with a low distortion performance, low RDS(on) and high switching speeds. The array is suitable for applications requiring high efficiency, power management and motor control. Its various power ratings and limited safe operating areas make it a suitable choice for power supply applications.

The specific data is subject to PDF, and the above content is for reference

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