NX3008NBKSH Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2726-2-ND |
Manufacturer Part#: |
NX3008NBKSH |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2 N-CH 30V 350MA 6TSSOP |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 350mA (Ta) 445... |
DataSheet: | NX3008NBKSH Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06260 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 350mA (Ta) |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 350mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 15V |
Power - Max: | 445mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | 6-TSSOP |
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The NX3008NBKSH is an array of eight N-channel Metal-oxide-semiconductor Field-effect Transistors (MOSFETs) in a single package.MOSFETs are a type of field-effect transistor (FET) which use the electric field associated with the device’s gate terminal (a metal oxide-semiconductor) to control current flow through the channel between two terminals or electrodes, the source and the drain.The NX3008NBKSH array comprises of eight laterally diffused metal oxide semiconductor (LDMOS) transistors in a single package. It represents a cost effective, space efficient, and easily handled option for implementing eight MOSFETs in a single device. It is usually used in high power applications like motor control, antenna tuning, audio amplification, and switched mode power supplies (SMPS).The NX3008NBKSH array can be connected in several ways, the most common being parallel connection. In a parallel connection, each source is linked to the same common point and the drain of each device is separately connected. This allows a higher current to flow through the circuit by adding more power, which is ideal for high power applications.The NX3008NBKSH array also has several advantages over traditional MOSFETs. It has improved power cycling efficiency, along with low gate capacitance and total gate charge, allowing for better heat dissipation and improved power efficiency in high power applications. Additionally, it has low on-resistance, enabling it to handle high switching currents with minimal power loss, and it also has very fast switching speeds, making it ideal for high-speed applications.In terms of its working principle, the NX3008NBKSH array uses a metal oxide semiconductor (MOS) process to control current. When a voltage is applied to the gate terminal, the electric field created by the voltage interacts with the source and drain terminals to regulate where and how much current can pass through. The NX3008NBKSH array also has low output capacitance, fast rise and fall times, and low thresholds, all of which contribute to improved performance and power efficiency.In conclusion, the NX3008NBKSH array is an ideal solution for high power applications. It is cost effective, space efficient, and easily handled, and its ability to handle higher currents with minimal power loss makes it a great choice for motor control, antenna tuning, audio amplification, and switched mode power supplies (SMPS). Additionally, its improved power cycling efficiency, low gate capacitance, and fast switching speeds make it a great choice for high-speed applications.
The specific data is subject to PDF, and the above content is for reference
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