NX3008NBKSH Allicdata Electronics

NX3008NBKSH Discrete Semiconductor Products

Allicdata Part #:

1727-2726-2-ND

Manufacturer Part#:

NX3008NBKSH

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2 N-CH 30V 350MA 6TSSOP
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 350mA (Ta) 445...
DataSheet: NX3008NBKSH datasheetNX3008NBKSH Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06260
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 445mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Description

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The NX3008NBKSH is an array of eight N-channel Metal-oxide-semiconductor Field-effect Transistors (MOSFETs) in a single package.MOSFETs are a type of field-effect transistor (FET) which use the electric field associated with the device’s gate terminal (a metal oxide-semiconductor) to control current flow through the channel between two terminals or electrodes, the source and the drain.The NX3008NBKSH array comprises of eight laterally diffused metal oxide semiconductor (LDMOS) transistors in a single package. It represents a cost effective, space efficient, and easily handled option for implementing eight MOSFETs in a single device. It is usually used in high power applications like motor control, antenna tuning, audio amplification, and switched mode power supplies (SMPS).The NX3008NBKSH array can be connected in several ways, the most common being parallel connection. In a parallel connection, each source is linked to the same common point and the drain of each device is separately connected. This allows a higher current to flow through the circuit by adding more power, which is ideal for high power applications.The NX3008NBKSH array also has several advantages over traditional MOSFETs. It has improved power cycling efficiency, along with low gate capacitance and total gate charge, allowing for better heat dissipation and improved power efficiency in high power applications. Additionally, it has low on-resistance, enabling it to handle high switching currents with minimal power loss, and it also has very fast switching speeds, making it ideal for high-speed applications.In terms of its working principle, the NX3008NBKSH array uses a metal oxide semiconductor (MOS) process to control current. When a voltage is applied to the gate terminal, the electric field created by the voltage interacts with the source and drain terminals to regulate where and how much current can pass through. The NX3008NBKSH array also has low output capacitance, fast rise and fall times, and low thresholds, all of which contribute to improved performance and power efficiency.In conclusion, the NX3008NBKSH array is an ideal solution for high power applications. It is cost effective, space efficient, and easily handled, and its ability to handle higher currents with minimal power loss makes it a great choice for motor control, antenna tuning, audio amplification, and switched mode power supplies (SMPS). Additionally, its improved power cycling efficiency, low gate capacitance, and fast switching speeds make it a great choice for high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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