Allicdata Part #: | NX3020NAKVYL-ND |
Manufacturer Part#: |
NX3020NAKVYL |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET 2N-CH 30V 0.2A SOT666 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 200mA 260mW Su... |
DataSheet: | NX3020NAKVYL Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.03912 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 200mA |
Rds On (Max) @ Id, Vgs: | 4.5 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.44nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 20pF @ 10V |
Power - Max: | 260mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SOT-666 |
Description
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The NX3020NAKVYL is a special service transistor (transistor-fet) array used in the telecommunications industry. It is a specifically designed field effect transistor (FET) array with a built-in emitter breakdown protection circuit. The NX3020NAKVYL application field and working principle provide a combination of power handling and extremely high-speed to meet the needs of modern telecommunications systems. In addition, its low power consumption, small size, and high reliability make it ideal for a variety of applications.The NX3020NAKVYL is made up of four field effect transistors (FETs) arranged in a single package. Specifically, the four FETs are intended for MDM/ATM, T1/E1, Ethernet, synchronous optical network (SONET), and other high speed data applications. The four FETs operate as a unipolar four external ID constant-output transistor array and each FET has an internal emitter breakdown protection circuit. Each FET has a conduction mode of inherent gain, meaning that the current is inversely proportional to the voltage.
In terms of operation, the NX3020NAKVYL is based on the field effect transistor principles of operation. This means that the current flow in the FETs is proportional to the gate-source voltage (VGS). When a certain VGS is applied, a uniform current flows throughout the four FETs, giving the NX3020NAKVYL superior power handling capabilities. Furthermore, its low voltage drive and low power consumption give it increased stability.
One of the main benefits of the NX3020NAKVYL is its small size and high speed capability. Its small size and low power consumption make it perfect for use in applications where large and power-hungry circuitry cannot fit. Furthermore, it has an operating temperature range of -40°C to +85°C and a slew rate of 5.5V/ns, making it suitable for high speed data transmission.
In conclusion, the NX3020NAKVYL is a special service transistor array designed for use in high speed data applications in the telecommunications industry. Its four FETs offer superior power handling and extremely high-speed capabilities, supported by low voltage drive and low power consumption. These features make it ideal for a variety of applications, such as MDM/ATM, T1/E1, Ethernet, and SONET, and its small size ensures easy integration.
The specific data is subject to PDF, and the above content is for reference
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