NX3020NAKVYL Allicdata Electronics
Allicdata Part #:

NX3020NAKVYL-ND

Manufacturer Part#:

NX3020NAKVYL

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET 2N-CH 30V 0.2A SOT666
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 200mA 260mW Su...
DataSheet: NX3020NAKVYL datasheetNX3020NAKVYL Datasheet/PDF
Quantity: 1000
8000 +: $ 0.03912
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 10V
Power - Max: 260mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Description

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The NX3020NAKVYL is a special service transistor (transistor-fet) array used in the telecommunications industry. It is a specifically designed field effect transistor (FET) array with a built-in emitter breakdown protection circuit. The NX3020NAKVYL application field and working principle provide a combination of power handling and extremely high-speed to meet the needs of modern telecommunications systems. In addition, its low power consumption, small size, and high reliability make it ideal for a variety of applications.

The NX3020NAKVYL is made up of four field effect transistors (FETs) arranged in a single package. Specifically, the four FETs are intended for MDM/ATM, T1/E1, Ethernet, synchronous optical network (SONET), and other high speed data applications. The four FETs operate as a unipolar four external ID constant-output transistor array and each FET has an internal emitter breakdown protection circuit. Each FET has a conduction mode of inherent gain, meaning that the current is inversely proportional to the voltage.

In terms of operation, the NX3020NAKVYL is based on the field effect transistor principles of operation. This means that the current flow in the FETs is proportional to the gate-source voltage (VGS). When a certain VGS is applied, a uniform current flows throughout the four FETs, giving the NX3020NAKVYL superior power handling capabilities. Furthermore, its low voltage drive and low power consumption give it increased stability.

One of the main benefits of the NX3020NAKVYL is its small size and high speed capability. Its small size and low power consumption make it perfect for use in applications where large and power-hungry circuitry cannot fit. Furthermore, it has an operating temperature range of -40°C to +85°C and a slew rate of 5.5V/ns, making it suitable for high speed data transmission.

In conclusion, the NX3020NAKVYL is a special service transistor array designed for use in high speed data applications in the telecommunications industry. Its four FETs offer superior power handling and extremely high-speed capabilities, supported by low voltage drive and low power consumption. These features make it ideal for a variety of applications, such as MDM/ATM, T1/E1, Ethernet, and SONET, and its small size ensures easy integration.

The specific data is subject to PDF, and the above content is for reference

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