NZ9F11VT5G Allicdata Electronics
Allicdata Part #:

NZ9F11VT5G-ND

Manufacturer Part#:

NZ9F11VT5G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 11V 200MW SOD923
More Detail: Zener Diode 11V 200mW ±5% Surface Mount SOD-923
DataSheet: NZ9F11VT5G datasheetNZ9F11VT5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.02739
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 11V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923
Description

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The NZ9F11VT5G is a single Zener diode designed for integrated circuit applications. The diode is designed to provide an electrical current that follows a predetermined path and to provide a predetermined voltage. The diode is commonly used in voltage regulation, overvoltage protection, and other non-critical voltage applications.

The NZ9F11VT5G is constructed in the same way as a conventional diode, but it has a higher breakdown voltage. This enables the diode to maintain a constant electrical current regardless of changes in the applied voltage. The diode can be used to regulate the output voltage of a power supply, or to prevent overvoltage in a circuit.

The working principle of the NZ9F11VT5G is based on the Zener effect. When a reverse voltage is applied to the diode, a large electric current passes through the diode. This electric current causes the breakdown of the barrier layer between the p-type and n-type layers, allowing electrons to cross and creating a large current. As the applied voltage increases, the current increase until it reaches the breakdown voltage, and the voltage across the diode stabilizes at the Zener voltage.

The breakdown voltage of the NZ9F11VT5G is 11V. This means that, when a voltage greater than 11V is applied to the diode, the current passing through the diode will increase until it reaches the breakdown voltage. At this point, the diode will remain in a stable state and the voltage will remain at the Zener voltage. This makes the diode ideal for voltage regulation and overvoltage protection, as the diode will always maintain a constant voltage across its terminals regardless of the applied voltage.

The NZ9F11VT5G has a number of advantages over other types of diodes. It is small, allowing it to be used in high-density circuits, it has a high breakdown voltage, and it is relatively inexpensive. For these reasons, the NZ9F11VT5G is widely used in a variety of applications, such as voltage regulation, overvoltage protection, power conversion, and energy storage.

In conclusion, the NZ9F11VT5G is a single Zener diode designed for integrated circuit applications. It is constructed in the same way as a conventional diode, but it has a higher breakdown voltage. This enables the diode to provide a constant voltage regardless of changes in the applied voltage. The diode is used in voltage regulation, overvoltage protection, power conversion and energy storage, and is commonly found in industrial, automotive and consumer electronics.

The specific data is subject to PDF, and the above content is for reference

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