NZ9F8V2T5G Allicdata Electronics

NZ9F8V2T5G Discrete Semiconductor Products

Allicdata Part #:

NZ9F8V2T5GOSTR-ND

Manufacturer Part#:

NZ9F8V2T5G

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ZENER 8.2V 200MW SOD923
More Detail: Zener Diode 8.2V 200mW ±5% Surface Mount SOD-923
DataSheet: NZ9F8V2T5G datasheetNZ9F8V2T5G Datasheet/PDF
Quantity: 8000
8000 +: $ 0.02739
16000 +: $ 0.02328
24000 +: $ 0.02191
56000 +: $ 0.02054
Stock 8000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 8.2V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

Diodes are commonly used in electronics and are among the most commonly used components in the world. The most commonly used diode is the Zener diode. Zener diodes were developed as a replacement for vacuum tubes, to provide a way to integrate circuits into smaller packages. The Zener diode is known for its ability to operate in both directions, providing a controlled reverse breakdown.

The NZ9F8V2T5G is a single Zener diode from NXP Semiconductors. It has a wide operating voltage range from 4.7V to 200V, making it suitable for a wide range of applications. It also has a low reverse leakage current, making it a good choice for circuit protection.

The NZ9F8V2T5G offers a wide range of uses, particularly as a temperature regime circuit element, power supply rail clamping, or surge protection. It is also suitable for voltage clamping, voltage rule switching, and signal decoding applications.

The NZ9F8V2T5G diode is operated by applying a reverse bias to the PN junction. By applying a reverse bias to the diode, a small depletion region forms across the PN junction. However, as the applied voltage reaches the breakdown voltage, the depletion region is suddenly expanded due to the electric field across the PN junction. This sudden increase in electric potential across the junction causes a large current to flow through the diode.

The NZ9F8V2T5G offers excellent electrical characteristics, with a breakdown voltage of 200V, a forward bias current of 150mA, and a reverse leakage current of 5mA. Its high voltage range and low reverse leakage current make it an excellent choice for applications requiring effective power clamping, power supply rail clamping, surge protection, and voltage rule switching.

The NZ9F8V2T5G is also resistant to thermal stress and fatigue from temperature fluctuations, making it highly reliable over time. It is also RoHS compliant and available in a variety of lead frames. The diode is also easy to assemble and integrate into a circuit.

In summary, the NZ9F8V2T5G is a single Zener diode with a wide operating voltage range, low reverse leakage current, and high electrical characteristics. It is suitable for temperature regime circuit elements, power supply rail clamping, surge protection, and voltage rule switching applications. It is also resistant to thermal stress and fatigue, RoHS compliant, and available in a variety of lead frames, making it an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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