P4KE11C-B Circuit Protection |
|
| Allicdata Part #: | P4KE11C-B-ND |
| Manufacturer Part#: |
P4KE11C-B |
| Price: | $ 0.15 |
| Product Category: | Circuit Protection |
| Manufacturer: | Littelfuse Inc. |
| Short Description: | TVS DIODE 9.4V 16.38V DO204AL |
| More Detail: | N/A |
| DataSheet: | P4KE11C-B Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 500 +: | $ 0.13177 |
| Voltage - Clamping (Max) @ Ipp: | 16.38V |
| Supplier Device Package: | DO-204AL (DO-41) |
| Package / Case: | DO-204AL, DO-41, Axial |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 400W |
| Current - Peak Pulse (10/1000µs): | 26.3A |
| Series: | P4KE |
| Voltage - Breakdown (Min): | 9.95V |
| Voltage - Reverse Standoff (Typ): | 9.4V |
| Bidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS - Diodes is a technology used to protect electronic devices from transients or static electrical conditions. P4KE11C-B is a type of TVS - Diode that has broad applications and a varied working principle.The P4KE11C-B is an advanced type of bi-directional transient suppressor with a range of 250 mA to 11 V. It provides electronic devices protection from electrostatic discharge (ESD), electrical fast transient (EFT) or electrical over-stress (EOS). The P4KE11C-B offers a high-quality product with a high peak-pulse current that can exceed 5,000 amps, a low clamping voltage capability, and four working zones to protect the device from damage or malfunction.P4KE11C-B applications range from automotive and consumer electronics to industrial, military, and aerospace systems. It can also be used in high-voltage applications such as motor controls, power generation, and energy storage devices.The working principle of the P4KE11C-B is based on a two-stage process. In the first stage, the device absorbs and dissipates the incoming energy by combining the ESD, EFT, and EOS energy levels into a single shunt. This shunt creates an avalanche-like effect, clamping the voltage and discharging the current to ground. The avalanche then dissipates the transient energy through the dielectric material. In the second stage, the discharge current is clamped to a safe and steady state to prevent damage to the connected device. This is done by using a series of avalanche capacitors and Zener diodes. These avalanche diodes create a discrete and adjustable voltage drop that helps to limit the current flow and protect the device.P4KE11C-B technology can provide the protection that modern electronic devices require. This type of TVS diode is designed to handle a wide range of transient energy levels, making it suitable for various applications. With a high peak-pulse current rating and four working zones, the P4KE11C-B offers excellent protection against damage and malfunction. The two-stage process also helps to limit the discharge current and reduce the risk of damage to connected components. This makes it the ideal device to protect against ESD, EFT, and EOS events.
The specific data is subject to PDF, and the above content is for reference
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P4KE11C-B Datasheet/PDF