P4KE9.1C-B Allicdata Electronics

P4KE9.1C-B Circuit Protection

Allicdata Part #:

P4KE9.1C-B-ND

Manufacturer Part#:

P4KE9.1C-B

Price: $ 0.15
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: TVS DIODE 7.78V 14.07V DO204AL
More Detail: N/A
DataSheet: P4KE9.1C-B datasheetP4KE9.1C-B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
500 +: $ 0.13177
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Voltage - Clamping (Max) @ Ipp: 14.07V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 30.6A
Series: P4KE
Voltage - Breakdown (Min): 8.19V
Voltage - Reverse Standoff (Typ): 7.78V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are used for a variety of applications, ranging from over-voltage protection and high-speed signal protection to switching power supplies. The P4KE9.1C-B is an example of a TVS - Diode designed to provide protection and hasten the circuit response time by reducing the time it takes for electricity to pass through the diode. The diode is capable of handling up to 9.1 kilovolts and has a low clamping voltage of 14 volts. This makes it suitable for a wide range of applications.

The P4KE9.1C-B is typically used in fields such as automotive, consumer electronics, and industrial. Automotive applications include protecting engines, sensors, and electronic fuel injection (EFI) systems against high voltage transients. The P4KE9.1C-B can also be used in battery charging systems and for lightning strike protection in remote locations. In consumer electronics, the diode can be used in the protection of audio/video equipment, telephone systems, and power supplies.

The P4KE9.1C-B\'s working principle is based around a mechanism called \'avalanche breakdown.\' This is whereby a high voltage, below the P4KE9.1C-B\'s breakdown voltage, is applied across a diode. When a positive voltage is applied, electrons are allowed to flow freely in a process called forward bias. However, when a high enough negative voltage is applied, the electrons are forced into a highly active state, generating additional electrons, and resulting in a sudden increase in current.

The P4KE9.1C-B features a \'silicon-avalanche diode\' design, which has the benefit of having a lower voltage drop than other types of diode. This means that there is less power loss as electricity passes through the diode, allowing faster signal transmission. The high breakdown voltage of the P4KE9.1C-B also ensures that it can adequately protect against even the highest voltage transients.

In summary, the P4KE9.1C-B TVS - Diode is a high-performance device designed for the protection of a wide range of electronic items, including those found in automotive and consumer electronics fields. The diode features a low voltage drop and a high breakdown voltage, making it highly efficient and able to protect against even the most extreme transients. The diode is also simple to use, with a working principle based on the concept of \'avalanche breakdown.\'

The specific data is subject to PDF, and the above content is for reference

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