P4SMA33A R3G Circuit Protection

Voltage - Clamping (Max) @ Ipp:	45.7V
Supplier Device Package:	DO-214AC (SMA)
Package / Case:	DO-214AC, SMA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	400W
Current - Peak Pulse (10/1000µs):	9A
Series:	P4SMA
Voltage - Breakdown (Min):	31.35V
Voltage - Reverse Standoff (Typ):	28.2V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

P4SMA33A R3G is a transient voltage suppressor, also known as a TVS diode, which provides fast response time and high surge capability. It is designed for the protection of data circuits and vulnerable voltage-sensitive components from over-voltages. In addition, it also enhances the protection of telecom systems and industrial control circuits.The P4SMA33A R3G is a three-terminal device that consists of two electrodes, an anode and a cathode. The anode is connected to power and the cathode is connected to the circuit that requires protection. When the voltage between the anode and cathode exceeds the breakdown voltage of the device, the device rapidly switches into the breakdown region. During normal operation, the device presents a low dynamic impedance, allowing uninterrupted operation until an over-voltage event occurs.The P4SMA33A R3G has a fast response to voltage transients. Its reverse breakdown voltage is 33V, with peak pulse power dissipation of 1500W at 8/20us. This device is typically operated under unidirectional operation when protecting against electrostatic discharges. It also has a minimum clamping voltage of 24.5V.The P4SMA33A R3G has a wide range of application fields, including personal computers, telecom equipment, uninterruptible power supplies, and automotive systems. It is also used in consumer appliances, office equipment, medical equipment, and industrial control systems.The working principle of the P4SMA33A R3G device is based on the avalanche effect, which occurs when a reverse bias voltage exceeds the device\'s breakdown voltage. When the voltage across the anode and cathode exceeds the breakdown voltage of the device, the rate of current flow in the device increases rapidly and a high electric field forms. This electric field is capable of breaking free individual electrons from the atoms of the semiconductor material, allowing them to move and conduct the electric current. This process is known as impact ionization, and it is the basis for the avalanche breakdown effect.In conclusion, the P4SMA33A R3G is a TVS diode designed to provide fast voltage transient protection and improved surge capability. It is widely used in a number of different application fields and has a fast response time and high peak pulse power dissipation. Its working principle is based on avalanche breakdown, which occurs when a reverse bias voltage exceeds the breakdown voltage of the device.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description