P4SMA47A-E3/61 Allicdata Electronics

P4SMA47A-E3/61 Circuit Protection

Allicdata Part #:

P4SMA47A-E3/61GITR-ND

Manufacturer Part#:

P4SMA47A-E3/61

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 40.2V 64.8V DO214AC
More Detail: N/A
DataSheet: P4SMA47A-E3/61 datasheetP4SMA47A-E3/61 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Current - Peak Pulse (10/1000µs): 6.2A
Base Part Number: P4SMA
Supplier Device Package: DO-214AC (SMA)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Series: P4SMA, TransZorb®
Voltage - Clamping (Max) @ Ipp: 64.8V
Voltage - Breakdown (Min): 44.7V
Voltage - Reverse Standoff (Typ): 40.2V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS diodes, also known as Transient Voltage Suppression diodes, are an important component of many electronic designs. They are used to absorb and dissipate excess electrical energy, preventing it from damaging sensitive components on the circuit board. The P4SMA47A-E3/61, in particular, is a solid-state silicon avalanche diode designed to protect sensitive electronic components and circuits from damage due to voltage surges, inductive transients, static discharges, and even lightning-induced surges.

The P4SMA47A-E3/61 has a wide range of applications in the electronics industry. It is commonly used in consumer electronic devices such as televisions, telephones, computer peripherals, and even military equipment. It is also used in industrial settings for protecting motors, drives, generators, inverters, and other electronic equipment from transient overvoltages.

The working principle of the P4SMA47A-E3/61 is based on the avalanche breakdown of its P-N junction. When a transient voltage with amplitudes higher than its Peak Pulse Power rating, or Breakdown Voltage is applied to it, a large number of high-energy electrons are generated. These electrons break down the P-type and N-type regions of the silicon junction, thereby releasing large amounts of energy. This energy dissipates the surge energy and prevents it from reaching the sensitive components on the circuit board.

The P4SMA47A-E3/61 is designed to be highly resistant to breakdown, even when exposed to very high surge voltages. It is also designed to be highly reliable, as its breakdown voltage remains stable over time and is within very tight tolerances. The device also features low leakage current and low capacitance, making it an ideal choice for high-speed data lines.

The P4SMA47A-E3/61 is a versatile and reliable TVS diode that is suitable for a wide range of applications. It is designed to provide superior protection against voltage surges, inductive transients, static discharges, and even lightning-induced surges. Its peak pulse power rating and tight breakdown voltage tolerances make it an ideal choice for protecting sensitive electronic components on circuit boards from damage caused by transient overvoltages.

The specific data is subject to PDF, and the above content is for reference

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