P6002AB Allicdata Electronics
Allicdata Part #:

P6002AB-ND

Manufacturer Part#:

P6002AB

Price: $ 0.00
Product Category:

Circuit Protection

Manufacturer: Littelfuse Inc.
Short Description: SIDACTOR SURGE SUP M. TO220 275V
More Detail: N/A
DataSheet: P6002AB datasheetP6002AB Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: SIDACtor®
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
Voltage - Breakover: 350V, 700V
Voltage - Off State: 275V, 550V
Voltage - On State: 4V
Current - Peak Pulse (8/20µs): 250A
Current - Peak Pulse (10/1000µs): 80A
Current - Hold (Ih): 150mA
Number of Elements: 2
Capacitance: 45pF, 80pF
Mounting Type: Through Hole
Package / Case: TO-220-3 No Tab
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Thyristor devices, such as the P6002AB, are widely used in power and control systems to perform switching, gating, and other functions. A thyristor consists of a semiconductor material with four or more layers, composed of alternating N- and P-type regions. When this device is reversed biased, a voltage stress is set up across the thyristor and an internal gate current is applied to the gate electrode, turning the device on. The P6002AB is a thyristor device used in digital systems for controlling voltage overshoot and undershoot. This device can also be used for overvoltage protection in power factor correction systems, active filters and motor protection modules.

The P6002AB device is a four-layer alternating NPN-PNP thyristor, with an integral double-pole, double-throw (DPDT) switch. The double-pole switch ensures that the device is able to control the voltage either at the high voltage transition or at the low voltage transition, depending on the connection of the two sources. The P6002AB also contains a gate-controlled inverse current switch that can be triggered through the external gate electrode. This switch ensures that the P6002AB will be able to control the current either in the high-side source or in the low-side source, depending on the current direction.

The P6002AB has a number of features and advantages that make it a suitable choice for power and control systems. The device has low switching losses and reverse current blocking capability. It has a low leakage current and is capable of controlling the voltage overshoot and undershoot. Additionally, the P6002AB has a low turn-on current and a fast turn-on time. The device also has a low gate to cathode voltage drop and a low auxiliary power supply requirement. Furthermore, the device has a high gate-controlled inverse current capability and is capable of controlling the current.

The working principle of the P6002AB is based on semiconductor switching. When voltage is applied to the gate electrode, a gate current is set up which triggers the thyristor to turn on. This turning on of the thyristor causes the voltage of the two sources to be balanced. Consequently, the device can be used to perform switching, gating, and other functions. The device is also capable of regulating the current in the load side and in the source side, depending on the current direction.

The P6002AB device is an ideal choice for power and control systems that require a fast response time and high performance. The device has low switching losses and reverse current blocking capabilities, which makes it preferable for overvoltage protection systems. It is also capable of controlling the voltage overshoot and undershoot, and it has a low gate to cathode voltage drop and a low auxiliary power supply requirement. The device is suitable for a wide range of applications such as the protection of motors, active filters, power factor correction systems, and digital logic circuits.

The specific data is subject to PDF, and the above content is for reference

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