P6SMB120CAHE3/5B Allicdata Electronics

P6SMB120CAHE3/5B Circuit Protection

Allicdata Part #:

P6SMB120CAHE3/5B-ND

Manufacturer Part#:

P6SMB120CAHE3/5B

Price: $ 0.16
Product Category:

Circuit Protection

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: TVS DIODE 102V 165V DO214AA
More Detail: N/A
DataSheet: P6SMB120CAHE3/5B datasheetP6SMB120CAHE3/5B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3200 +: $ 0.14867
Stock 1000Can Ship Immediately
$ 0.16
Specifications
Current - Peak Pulse (10/1000µs): 3.6A
Base Part Number: P6SMB
Supplier Device Package: DO-214AA (SMBJ)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: Automotive
Power Line Protection: No
Power - Peak Pulse: 600W
Series: Automotive, AEC-Q101, P6SMB, TransZorb®
Voltage - Clamping (Max) @ Ipp: 165V
Voltage - Breakdown (Min): 114V
Voltage - Reverse Standoff (Typ): 102V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS (Transient Voltage Suppressor) diodes are a critical part of electronic circuits. The P6SMB120CAHE3/5B TVS diode is a bidirectional surface mount diode designed to protect electronic systems from voltage transients that may occur due to ESD (electrostatic discharge) as well as power inductive and switching transients. The P6SMB120CAHE3/5B is a high-power TVS diode with low breakdown voltage, low capacitance and high protection power.

The P6SMB120CAHE3/5B can offer protection from a wide range of voltage transients, making it suitable for a wide range of applications such as general-purpose ESD protection, power inductive protection and power supply line protection. The device can handle operating voltages up to 10V, allowing it to be used in a range of circuits with a wide range of voltages.

The P6SMB120CAHE3/5B uses a ‘V’ shaped bridge of diodes to provide a robust protection scheme. This bridge is connected to the load through two lines, one positive and one negative. The bridge is designed to clamp the voltage between the two lines, preventing any overvoltage. In order to do this effectively, the P6SMB120CAHE3/5B uses both reverse and avalanche breakdown characteristics so that the protection is not limited to one direction. If an overvoltage is encountered on either the positive or the negative line, the bridge quickly responds by clamping the voltage between the two lines to a safe maximum.

The breakdown voltage of the P6SMB120CAHE3/5B is very low, allowing it to be used in low-voltage applications such as 1.2V – 5.5V microprocessors and integrated circuits. The breakdown voltage is typically lower than the power supply voltage, thus the diode is not damaged when a transient overvoltage occurs. This makes the P6SMB120CAHE3/5B a reliable option for ESD protection and power inductive protection. The device also has low capacitance, which helps to reduce the risk of data corruption and interference.

The P6SMB120CAHE3/5B is a reliable and robust diode and is suitable for a range of applications. Its low breakdown voltage and low capacitance make it an ideal choice for protecting low-voltage circuits from voltage transients. Additionally, its bidirectional protection makes it an ideal choice for any circuit that requires reliable protection against electrostatic discharge and power inductive transients.

The specific data is subject to PDF, and the above content is for reference

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