PC28F512P30BFA

Write Cycle Time - Word, Page:	100ns
Base Part Number:	28F512P30
Supplier Device Package:	64-EasyBGA (8x10)
Package / Case:	64-TBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	1.7 V ~ 2 V
Memory Interface:	Parallel
Access Time:	100ns
Series:	Axcell™
Clock Frequency:	52MHz
Memory Size:	512Mb (32M x 16)
Technology:	FLASH - NOR
Memory Format:	FLASH
Memory Type:	Non-Volatile
Part Status:	Obsolete
Packaging:	Tray

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Introduction - PC28F512P30BFA Memory

PC28F512P30BFA is a type of The ON SemiconductorNEC Flash memory. It is also known as an electrically erasable programmable read-only memory (EEPROM). This device is a non-volatile, CMOS, flash memory device optimized for low power consumption and internal First-In/First-Out (FIFO) architectures.

Features

The ON SemiconductorNEC PC28F512P30BFA memory has a long list of features designed to maximize the efficiency and performance of its implementation. This device features a maximum clock rate of 28 MHz, an integrated 512K x 8 or 64K x 32 (for FIFO) array.In addition, PC28F512P30BFA includes a signature-programming mode and a 20-bit address bus which allows it to extend its range to access up to one megabyte of density. It has advanced fast write/erase algorithms that allow the device to erase target cells more quickly than traditional methods. Moreover, the device supports a full range of clock frequencies and offers a robust architecture to support multiple flash devices on a single chip.The built-in security features of the device protect against undesired code execution and unauthorized access. These include a built-in write-protect switch to block program or erase operations and a power-on delay feature to prevent unwanted execution.

Application Fields

The ON SemiconductorPC28F512P30BFA memory has a wide range of applications. It is commonly found in embedded systems, industrial automation, automotive electronics, medical computer systems, and consumer electronics. It is also used in data management and storage applications, smart cards, remote control systems, and Internet of Things (IoT) applications.The high-speed clock rate and low-power consumption of the device make it an ideal choice for handheld and mobile devices. This makes it suitable for use in personal digital assistants (PDAs), smart phones, digital cameras, and wireless networks.In addition, the device offers a reliable memory sector with enhanced security features, making it ideal for mission critical applications such as military and aerospace applications.

Working Principle

The working principle of the ON SemiconductorPC28F512P30BFA memory is based on an internal FIFO architecture. This architecture allows the device to store data in a sequential order, similar to a file cabinet.Data is stored in sets of 8 bits or 32 bits, representing the size of the data that is to be stored. When the device is given a write command, the data is read into the FIFO byte per byte and stored in the FIFO at the end of the data stream.When the device is given a read command, the data is read from the FIFO starting from the beginning of the data stream. The order of the data remains unchanged.

Conclusion

The PC28F512P30BFA memory offers a wide range of features and applications that make it an ideal choice for a variety of applications. It is designed for high-speed performance and low power consumption, making it suitable for use in portable and embedded systems, as well as mission critical applications. The FIFO architecture of the device allows data to be stored, read, and manipulated easily and efficiently.

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