PC28F512M29EWHE TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (64M x 8, 32M x 16)
Write Cycle Time - Word, Page:	100ns
Access Time:	100ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-LBGA
Supplier Device Package:	64-FBGA (11x13)
Base Part Number:	PC28F512M29

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Introduction

The PC28F512M29EWHE TR belongs to the memory category. It is a Flash Memory with a capacity of 4 GB and is used in a variety of applications. The product is particularly well-suited for complex data storage in the most advanced telecommunication, aerospace, industrial and military applications. It features a special 28F512M29EWHETR interface, error detection and parity checking, and an enhanced write cycle. This article will discuss the general application fields and working principle of PC28F512M29EWHE TR Flash Memory.

Application Field

The PC28F512M29EWHE TR is a high-end Flash Memory developed specifically for use in modern high-performance computing systems. It is suitable for applications in Operating Systems (OS) such as Windows 7, 8 and 10, and Linux, as well as embedded systems that require large-capacity storage. The product has a maximum write speed of 87.5 MB/s and a maximum read speed of 113 MB/s. Additionally, this memory offers advanced memory management, which makes it well-suited for storage-intensive applications such as multimedia, gaming and virtual reality.Because of its powerful performance capabilities and flexibility, the PC28F512M29EWHE TR is also used for mission-critical applications in the telecommunications, aerospace, military and industrial fields. It offers impressive data security features, including error detection and parity checking, ensuring that the data stored on the memory is safe and secure from malicious activities.

Working Principle

The basic operation of PC28F512M29EWHE TR Flash Memory is similar to other types of memory. The memory cell is composed of two transistors and a capacitor, arranged in a matrix array. The arrangement allows for multiple cells to be read and written to simultaneously, allowing for fast access and data throughput.When writing data to the memory, an electric charge is applied to the selected memory cells. A voltage is then applied to the capacitor, charging it with electricity, and data is written to the memory cell. To read the data, the electricity stored in the capacitor is discharged, and the voltage and current levels are read by the memory controller. The PC28F512M29EWHE TR Flash Memory is equipped with a special 28F512M29EWHETR interface, providing for a higher data transfer rate compared to conventional Flash Memory. This interface also features enhanced error detection and parity checking capabilities, ensuring that data stored on the memory is reliable and secure from malicious attacks.

Conclusion

In summary, the PC28F512M29EWHE TR Flash Memory is a high-end memory designed for high-end applications in the telecommunications, aerospace, industrial and military fields. It offers exceptional performance, with a maximum read and write speed of 113MB/s and 87.5MB/s, respectively. Furthermore, it features a special 28F512M29EWHETR interface, as well as enhanced error detection and parity checking capabilities, ensuring that data stored on the memory is secure and reliable.

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