| Allicdata Part #: | PC28F512P30EF0-ND |
| Manufacturer Part#: |
PC28F512P30EF0 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 512M PARALLEL 64EASYBGA |
| More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 52... |
| DataSheet: | PC28F512P30EF0 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 100ns |
| Base Part Number: | 28F512P30 |
| Supplier Device Package: | 64-EasyBGA (8x10) |
| Package / Case: | 64-TBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Voltage - Supply: | 1.7 V ~ 2 V |
| Memory Interface: | Parallel |
| Access Time: | 100ns |
| Series: | Axcell™ |
| Clock Frequency: | 52MHz |
| Memory Size: | 512Mb (32M x 16) |
| Technology: | FLASH - NOR |
| Memory Format: | FLASH |
| Memory Type: | Non-Volatile |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tray |
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The PC28F512P30EF0 is a Memory device that features the latest advances in memory technology. The device is a single 8-bit wide x 512KByte NOR Flash memory which is ideal for a wide variety of applications. It provides a very easy and economical solution for storing and retrieving digital data in various devices. In this article, we will discuss the application field and working principle of the PC28F512P30EF0.
PC28F512P30EF0 Application Field
The PC28F512P30EF0 is suitable for various embedded systems, including industrial systems, personal computers, communication devices, networking products and consumer electronics. It is also used in automotive and medical products, among other areas. The device can be used as long-term storage for data such as program code, system parameters and user information. It can be used in a wide range of products including, but not limited to, mobile phones, PDAs, digital cameras, personal media players, video game players and other portable electronics.
PC28F512P30EF0 Working Principle
The PC28F512P30EF0 uses a two-transistor cell design to store data. Each Flash cell consists of a single MOSFET transistor and a single MOS capacitor. The MOS capacitor is used as a storage element in which electrons are trapped and form charge bits representing the stored data which is 0 or 1. Read commands can be issued to memory cells which will then detect the voltage state of the charge bits in the cell to read the stored data.
In addition to the read command, the device also features write, erase and program commands. Writing or erasing operations can be performed on either a single cell or an entire block or page. Erase operations are performed with the aid of Fowler-Nordheim tunneling. Program operations are performed by writing the desired data to the cell\'s memory array in a sequential fashion. The device is also able to perform sequential and random reads from any address.
The PC28F512P30EF0 also offers power saving features to reduce energy consumption. The device includes sleep mode which reduces power consumption when the device is idle. This helps to reduce power consumption and extend battery life. The device also includes write protection which prevents accidental data being written or erased.
Conclusion
In conclusion, the PC28F512P30EF0 is a versatile memory device that has a wide range of applications. It has the latest advances in memory technology and is suitable for a variety of embedded systems. It features a two-transistor cell design and provides features such as write protection, sleep mode, and read and program operations. The device is ideal for long-term data storage and offers a cost-effective solution for various types of electronic devices.
The specific data is subject to PDF, and the above content is for reference
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PC28F512P30EF0 Datasheet/PDF