Allicdata Part #: | PC28F640J3D75A-ND |
Manufacturer Part#: |
PC28F640J3D75A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M PARALLEL 64EASYBGA |
More Detail: | FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral... |
DataSheet: | PC28F640J3D75A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | StrataFlash™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (8M x 8, 4M x 16) |
Write Cycle Time - Word, Page: | 75ns |
Access Time: | 75ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-TBGA |
Supplier Device Package: | 64-EasyBGA (10x13) |
Base Part Number: | 28F640J3 |
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PC28F640J3D75A is a memory device widely used in today\'s technology. It is a one-time programmable (OTP) electrically erasable programmable read-only memory (EEPROM) with high speed access times. It is also known as “Flash” memory, which is different from traditional memory devices in that it can be erased and reprogrammable.
PC28F640J3D75A is normally used in applications such as digital signage, automotive instrument clusters and factory automation systems, among others. The device enables these applications to store data persistently and with high reliability. This is achieved by incorporating sophisticated error-correction technology.
Due to its OTP capabilities, the device is suitable for applications requiring dense memory storage as it requires minimal board space and offers a high-density memory storage solution.
In terms of its working principle, PC28F640J3D75A enables data storage through the creation of a data array consisting of 64K words. Each word is organized into 32 cells that are arranged in rows and columns. Each cell is then divided into two parts. The first part is used for storing the data itself, which consists of 8 bits plus the associated 9th parity-check bit. The second part is used for storing a code indicating the status of the cell.
In terms of operation, in order to write data to the device, the status code is first changed to write-enable bit indicating that the cell is ready for writing. The data is then written to the cell and the write-enable status is set to zero. This indicates that the content of the cell is now stored.
In order to read the data stored in the device, the status code is again checked and the appropriate read command is sent to the cell. The content of the cell is read and the status code is changed to indicate that the operation is complete.
PC28F640J3D75A is also capable of erasing the data stored in its cells. This is accomplished by changing the status code to the erase-enable bit, which indicates that the cells are ready to be erased. The data is then erased and the status code is again changed to indicate that the erase operation is complete.
Overall, PC28F640J3D75A is an excellent memory device characterized by its high speed access times, OTP capabilities and its sophisticated error-correction technology. This makes it a suitable solution for applications requiring high-density memory storage.
The specific data is subject to PDF, and the above content is for reference
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PC28F640J3D75B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 64E... |
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PC28F640P30T85B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 64E... |
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PC28F128P33B85B TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 64... |
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