Allicdata Part #: | PDZ30BGWJ-ND |
Manufacturer Part#: |
PDZ30BGWJ |
Price: | $ 0.01 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | PDZ30BGWSOD123SOD2 |
More Detail: | Zener Diode |
DataSheet: | PDZ30BGWJ Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01323 |
Series: | * |
Part Status: | Active |
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Diodes - Zener - Single is a semiconductor device that uses a junction of materials p-type and n-type to conduct current in a controlled manner. The PDZ30BGWJ is an ultra-low capacitance, low leakage, and low noise Zener diode for ESD (electro-static discharge) and EMI (electro-magnetic interference) protection. It is designed for use in high-speed, data processing circuits and is also suitable for various applications like decoupling, voltage clamps, and EMI/ESD protection where ultra-low capacitance and low reverse leakage current are necessary.
The working principle behind the PDZ30BGWJ is based on the Zener breakdown phenomenon, which occurs when reverse bias voltage across two semiconductor junctions creates an electric field that is strong enough to overcome the dielectric strength of the semi-conductor material. Once the electric field is strong enough to overcome the dielectric strength, electrons pulse away from atom nuclei, creating a tunneling effect. When the tunneling effect is strong enough, electrons cross from one junction to the other, creating a reverse current flow. This allows for the controlled conduction of current, which prevents the circuit from becoming overloaded from a voltage spike.
The PDZ30BGWJ is designed for use in a variety of fast-moving and data processing circuits, and has a low capacitance value of 8 picofarads and a maximum ESD protection level of ±8kV. It also has an operating temperature range of -55°C up to 125°C, making it ideal for high-reliability circuits that require a wide temperature range. Additionally, the PDZ30BGWJ has a low leakage current of 2μA, which means it is suitable for use in power line isolation, power transistors, field effect transistors, and other semiconductor apparatuses.
The PDZ30BGWJ is designed for use in a wide range of applications, including optocouplers and RF circuits protection, differential signal transmission, clock protection, and power supply filtering. Thanks to its low capacitance and leakage current, it can also be used for ESD and EMI protection, precision voltage clamping, and power supply. Additionally, the PDZ30BGWJ offers excellent circuit protection with robust static and dynamic characteristics, and its low leakage current makes it ideal for high-reliability circuits and power line regulation/isolation circuits.
In conclusion, the PDZ30BGWJ is a great choice for a variety of applications which require low capacitance, low leakage current, and ESD/EMI protection. It offers robust static and dynamic characteristics, making it ideal for use in fast-moving and data processing circuits. Thanks to its wide operating temperature range, the PDZ30BGWJ is also suitable for high-reliability circuits that require a wide temperature range. Additionally, it has a low leakage current so it can be used in power line regulation and power line isolation circuits.
The specific data is subject to PDF, and the above content is for reference
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