Allicdata Part #: | 1046-1173-2-ND |
Manufacturer Part#: |
PE29102A-X |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | pSemi |
Short Description: | ULTRACMOS HIGH-SPEED FET DRIVER |
More Detail: | Gate Driver IC 16-FlipChip (2.04x1.64) |
DataSheet: | PE29102A-X Datasheet/PDF |
Quantity: | 3000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Mounting Type: | Surface Mount |
Package / Case: | 16-XFBGA, FCBGA |
Supplier Device Package: | 16-FlipChip (2.04x1.64) |
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PE29102A-X is a high performance gate driver IC (Integrated Circuit) designed to drive the gate terminal of external MOSFETs. These devices are designed to operate in high power applications such as power factor correction (PFC), motor control, resonant converters and LLC (Inductive Link Converters) converters.
The PE29102A-X offers both a high voltage gate driver to drive the external MOSFET as well as a low voltage gate driver to drive an internal control intermediate MOSFET. The device has an integrated bootstrap diode and is able to drive both the high and low voltage MOSFETs with the same power supply from a single rail of voltage. This eliminates the need for an additional power supply for driving the high voltage gate terminal of the external MOSFET.
The PE29102A-X utilizes a patented Gate Driver Technology (GDT) to achieve high speed switching and superior performance. This technology enables the control of the output current source/sink while maintaining a stable output during transient conditions. The result is a highly efficient power delivered to the gate terminal without the need for any additional circuitry.
The PE29102A-X features a high driving efficiency, a wide input voltage range, a low propagation delay and a fast turn-off time. It also has a low quiescent current for reduced system power consumption. The integrated bootstrap circuit eliminates the need for external components and simplifies the design of the gate-driver circuitry. Additionally, the device has an integrated driver disable feature to quickly turn off the gate driver when required.
The PE29102A-X is designed to drive both the high and low voltage MOSFETs in class-D and class-F motor control applications. The device has two outputs, one for driving the low-voltage gate of the intermediate MOSFET and one for driving the high voltage gate of the external MOSFET. This provides an efficient way to control both the power MOSFETs in the application.
The PE29102A-X is well-suited for applications requiring high power, such as home appliances, automotive, industrial and communication systems. The device provides a high current drive, high speed switching and a low propagation delay to enable reliable operation, even in harsh operating conditions. Additionally, the device is able to deliver a high output current to the gate terminal of the both MOSFETs, thereby enabling a higher efficiency and lower system cost.
In summary, it can be said that the PE29102A-X offers a powerful and reliable gate driver solution for a wide range of applications. This device provides high speed switching, a low propagation delay, a wide input voltage range and a low quiescent current. It is capable of driving both the high and low voltage MOSFETs with the same power supply and is also well-suited for applications requiring high power. Furthermore, the device has an integrated bootstrap circuit and driver disable feature, which simplifies the design process and reduces system costs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PE29102A-X | pSemi | -- | 3000 | ULTRACMOS HIGH-SPEED FET ... |
PE29100A-X | pSemi | 1.87 $ | 500 | HIGH-SPEED FET DRIVER 33 ... |
PE29101A-X | pSemi | 1.55 $ | 1000 | HIGH SPEED FET DRIVER WIT... |
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