PE42451MLIAA-Z

Test Frequency:	4GHz
Supplier Device Package:	24-QFN (4x4)
Package / Case:	24-WFQFN Exposed Pad
Operating Temperature:	-40°C ~ 85°C
Voltage - Supply:	2.7 V ~ 3.3 V
Impedance:	50 Ohm
Features:	DC Blocked
IIP3:	58dBm
P1dB:	35dBm
Series:	UltraCMOS®, HaRP™
Insertion Loss:	2.25dB
Isolation:	50dB
Frequency Range:	450MHz ~ 4GHz
Circuit:	SP5T
Topology:	Absorptive
RF Type:	General Purpose
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

PE42451MLIAA-Z is a RF switch, combined with a double-balanced diode-ring modulator, a single-pole double-throw switch, two Schottky diode detectors and a voltage controlled amplifier. It is designed for 24–51GHz frequency band applications. This device provides a high degree of isolation, low loss, and linear analog control, making it an ideal choice for a wide range of applications, from electromagnetics to wireless networks.

Application Field

PE42451MLIAA-Z has a wide application field, from telecommunications, wireless communications, imaging and radar systems to defense and homeland security systems. Its features, such as a high degree of isolation and low insertion loss, make it suitable for a variety of applications.In telecommunications, PE42451MLIAA-Z is used for wireless communications, such as Bluetooth, Wi-Fi, cellular systems and WiMAX. It is also used in imaging systems, such as microwave medical imaging, radar, satellite and telemetry systems. In addition, it is also used in defense and homeland security systems, such as missile guidance and navigation systems.

Working Principle

PE42451MLIAA-Z is a low-power RF switch. It is powered by a single power supply and is controlled by a voltage-controlled amplifier. The RF signal is routed through a double-balanced diode-ring modulator, which passes the RF signal through a single-pole double-throw switch.The RF signal is then passed through two Schottky detector diodes, which detect the amplitude and phase of the input signal and control the voltage-controlled amplifier. The voltage-controlled amplifier then controls the bias voltage of the single-pole double-throw switch, which is used to control the insertion loss and isolation of the switch. With the bias voltage change, the isolation and insertion loss of the switch are modulated and can be adjusted according to the input signal.

Conclusion

PE42451MLIAA-Z is a low-power RF switch that is designed for 24-51GHz frequency band applications. It provides a high degree of isolation, low insertion loss, and linear analog control. It is used in a wide range of applications, from telecommunications, wireless communications, imaging and radar systems to defense and homeland security systems. The device is powered by a single power supply and is controlled by a voltage-controlled amplifier. The RF signal is routed through a double-balanced diode-ring modulator and is then passed through two Schottky detector diodes. The voltage-controlled amplifier then controls the bias voltage of the single-pole double-throw switch, which is used to control the insertion loss and isolation of the switch.

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