PGSMAJ9.0CA R3G Circuit Protection

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TVS diodes are mainly used for protection against lightning strikes, environmental stress, and high overvoltage transients in power line and telecommunications systems. In this context, one of the most important application fields of TVS diodes is protection of high-speed data lines, such as Universal Serial Bus (USB) ports and Ethernet networks. Technically, TVS diodes are Infineon\'s N-channel MOSFETs, specifically designed for high-speed transient voltage suppressors (TVSs).

In terms of technology used, TO-220 (SOT-223) packages (PWDM version) are the most commonly used. The PGSMAJ9.0CA R3G is the state-of-the-art TVS MOSFET technology from Infineon Technologies that is specifically tailored for ultra-low capacitance levels. This technology is used for ultra-low capacitance I/O protection in high speed data systems, such as Universal Serial Bus (USB) ports and Ethernet networks.

The working principle of the PGSMAJ9.0CA R3G is based on the MOSFET itself. The component is a symmetrical bipolar N-channel C-MOS MOSFET. The device can withstand up to 98 V Absolute Maximum Rating (AMR, or "operation") and up to 30 V average (High Operating Temperature or HOT) for hot-swap and data line protection applications. The maximum drain-source voltage is also 98 V, which allows the device to handle high-voltage or high-speed transient events. The gate-source voltage limited to ±4 V ensures that the device will not be damaged during the protection event.

The PGSMAJ9.0CA R3G is a self-biased device, so no additional protection components, such as a voltage-clamping diode, are required for operation. The on-state resistive load is independent of the device voltage and temperature. The PGSMAJ9.0CA R3G has a low capacitance of 1.5 pF, allowing it to operate at high frequencies and low turn-on delays, typically from 1 to 3 ns. The device is capable of handling overshoots of up to 150 V, while the leakage currents are very low and the RDS(on) is extremely low.

The PGSMAJ9.0CA R3G TVS MOSFETs (Transient Voltage Suppression (TVS) Diodes) from Infineon Technologies are designed for ultra low capacitance levels and are suitable for protection of high speed data lines such as USB and Ethernet. The device features high voltage and high speed response times, ultra low capacitance levels, and an extremely low RDS(on) level. The device is self-biased, allowing it to respond quickly and reliably to transient events. This technology provides an effective solution for protecting high speed data lines from fast and damaging voltage transients.

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