Allicdata Part #: | 1465-1193-ND |
Manufacturer Part#: |
PH1090-175L |
Price: | $ 190.42 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANSISTOR BIPOLAR 175W 1090MHZ |
More Detail: | RF Transistor NPN 80V 10.5A 188W Chassis Mount |
DataSheet: | PH1090-175L Datasheet/PDF |
Quantity: | 48 |
1 +: | $ 173.11100 |
10 +: | $ 164.75100 |
25 +: | $ 158.78200 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | -- |
Gain: | 8.58dB |
Power - Max: | 188W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Current - Collector (Ic) (Max): | 10.5A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | -- |
Supplier Device Package: | -- |
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The PH1090-175L is a type of bipolar junction transistor (BJT), specifically used in radio frequency (RF) applications. It is used to amplify high frequency signals, and is a common transistor choice for amplifying audio frequencies in radio applications. The PH1090-175L is also used for power applications, such as amplifying antenna signals for transmitting or receiving wireless communications.
The PH1090-175L is a transistor composed of three terminals, called the base, collector, and emitter. The collector and emitter correspond with the output current of the transistor. The base terminal is the control element and is used to control the flow of current through the collector and emitter.
The PH1090-175L has a maximum operating frequency of 200 MHz, with a maximum collector-emitter voltage of 5 volts and a maximum collector current of 175 mA. The maximum power output of the transistor is also 450 mW.
A typical PH1090-175L RF amplifier circuit consists of just one transistor and a few external components. These components may include bypass capacitors, a base bias resistor, an emitter resistor, and a collector load resistor.
When a signal is applied to the base terminal, it is amplified and appears at the collector-emitter terminals. The base bias resistor is used to set the amount of current flowing into the transistor\'s base. This, in turn, sets the amount of current flowing from the collector-emitter terminals. The bypass capacitors are used to reduce the amount of signal loss due to frequency fluctuations.
The emitter resistor is used to limit the amount of current that can flow from the base to the emitter, and the collector load resistor is used to limit the amount of current that can flow from the collector to the emitter. This provides a controlled output from the transistor.
The PH1090-175L has a low noise figure, making it well-suited for use in audio applications. It also has good high-frequency linearity, which makes it well-suited for power applications. Its high input resistance also makes it well-suited for switching applications.
In conclusion, the PH1090-175L bipolar junction transistor is a useful device for many RF applications, since it is capable of both power and audio amplification. It is also useful for switching applications due to its high input resistance. It is typically used in combination with a few external components, such as bypass capacitors, bias resistors, emitter resistors, and load resistors.
The specific data is subject to PDF, and the above content is for reference
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