Allicdata Part #: | 1465-1194-ND |
Manufacturer Part#: |
PH1090-350L |
Price: | $ 319.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANSISTOR 350W 1090MHZ |
More Detail: | RF Transistor NPN 80V 17A 350W Chassis Mount |
DataSheet: | PH1090-350L Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 290.59000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | -- |
Gain: | 8.32dB |
Power - Max: | 350W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Current - Collector (Ic) (Max): | 17A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | -- |
Supplier Device Package: | -- |
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Bipolar junction transistors (BJT) rely on the movement of charge carriers in a semiconductor material to amplify electrical signals. As one of the many types of BOJTs, the PH1090-350L is a discrete high-frequency device with a wide variety of applications. In this article, we will discuss the PH1090-350L\'s application field and working principle, as well as how they uniquely contribute to modern day applications.
The PH1090-350L is based on a NPN structure with a 25V base-emitter reverse voltage in order to work. Because of this, it can effectively amplify signals with a frequency range of up to 500 MHz. It features a relatively low noise figure and a high linearity which makes it an ideal choice for a variety of communication systems, such as military radios, which rely on low-noise operation and precise signal amplification.
The PH1090-350L is also well suited for linear amplification applications in television broadcast and radio-frequency (RF) applications. This is because of its relatively low distortion characteristics and low noise figure. It has a wide dynamic range and is capable of providing considerable gain, making it an ideal element for applications where precise signal amplification is required.
When it comes to its working principle, the PH1090-350L utilizes a NPN configuration to amplify electrical signals. The base-emitter junction is the primary active element in BJTs. When a small current flows through the base-emitter junction, it influences the voltage drop across it, which in turn influences the current through the collector-emitter junction. This is the basis of signal amplification.
The performance of the PH1090-350L is further enhanced by its built-in temperature compensation circuit. This circuitry helps it respond uniformly to changes in temperature, ensuring it remains stable and reliable throughout varied environmental conditions.
In summary, the PH1090-350L is a discrete high-frequency bipolar junction transistor (BJT) that offers low noise, low distortion and wide dynamic range. This makes it an ideal choice for applications requiring high performance, such as radios and television broadcast systems. Its built-in temperature compensation ensures reliable operation and excellent performance in a range of environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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