Allicdata Part #: | PH2369,112-ND |
Manufacturer Part#: |
PH2369,112 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 15V 0.2A SOT54 |
More Detail: | Bipolar (BJT) Transistor NPN 15V 200mA 500MHz 500m... |
DataSheet: | PH2369,112 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 400nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 1V |
Power - Max: | 500mW |
Frequency - Transition: | 500MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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The PH2369 112 is a type of bipolar junction transistor (BJT) specially designed in the field of industrial and automotive electronics. It is a type of single transistor with low power consumption and high-current capacity, and is known for its unique design that gives it superior thermal and electrical performance.
The PH2369 112 is a NPN transistor in a TO-263 power package with a maximum power dissipation of 1W and a maximum junction temperature of 150°C. It features an excellent thermal resistance with a range of 15K/W, which allows for efficient thermal management of the device. The PH2369 112 has an excellent input/output impedance ratio and is suitable for use in high-frequency, low-noise applications. This makes it suitable for use in audio and high-speed switching applications.
In terms of applications, the PH2369 112 is commonly used in the industrial and automotive industries. It is a popular choice for power amplifier design in audio circuit design, as it can deliver high current capacity with low power consumption. It can also be used for various switching applications such as relays and switches, as it has an excellent input/output impedance ratio. Additionally, it is suitable for use in pulse transformers and as an auxiliary power transistor.
The working principle of the PH2369 112 is similar to that of other bipolar junction transistors (BJTs). It is a voltage-controlled device, which means that the current that passes through the device is determined by the voltage applied to the base. The collector-emitter current is controlled by the base current, and the collector-emitter voltage is controlled by the base-emitter voltage. As the base voltage is increased, the emitter-base junction becomes more forward biased, which causes the collector-emitter current to increase. The amplification factor of the PH2369 112 is determined by the current gain, which can be as high as 200. This allows the device to be used as a power amplifier in audio circuit designs, as it can amplify the output voltage up to 200 times.
The PH2369 112 is a powerful and reliable device that is suitable for a wide range of industrial and automotive applications. Its unique design and excellent thermal and electrical properties make it a popular choice for many electronic applications. It is a useful device for audio circuit design, as it can deliver high performance with low power consumption. Additionally, it is suitable for various switching applications, as it has an excellent input/output impedance ratio. Therefore, the PH2369 112 is a versatile device that is suitable for many different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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