PH3134-30S Allicdata Electronics
Allicdata Part #:

1465-1201-ND

Manufacturer Part#:

PH3134-30S

Price: $ 191.64
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: TRANSISTOR 30W 3.10-3.40GHZ
More Detail: RF Transistor NPN 65V 3.6A 30W Chassis Mount
DataSheet: PH3134-30S datasheetPH3134-30S Datasheet/PDF
Quantity: 1000
20 +: $ 174.21900
Stock 1000Can Ship Immediately
$ 191.64
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: --
Noise Figure (dB Typ @ f): --
Gain: 7.5dB
Power - Max: 30W
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Current - Collector (Ic) (Max): 3.6A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: --
Supplier Device Package: --
Description

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The PH3134-30S Transistor is a bipolar RF type of transistor. It is designed to be used in RF transmitters, receivers and related applications. This transistor has a wide frequency of operation, ranging from 10 MHz to 130MHz and an even wider range of current gains. The maximum collector current of this transistor is 3A, with a maximum collector-base voltage of 30V. Its power dissipation rating is 500mW.

The PH3134-30S transistor has many advantages, specifically in RF applications. This transistor is very stable and reliable, with excellent linearity and low power consumption. It has a wide operating temperature range of -55° to +125°C, which allows it to perform in extreme temperatures. The PH3134-30S has low noise generation and high reverse transfer admittance, making it a preferable choice for RF applications.

The working principle of the PH3134-30S transistor is much like any other bipolar transistor. It is made up of three layers of semiconductor materials: the emitter, the base and the collector. Electrons and holes both flow through these layers, with the base restricting the flow. The current gain is determined by the ratio of base current and collector current, as well as the type of material used. When a voltage is applied to the base, it opens the gate and allows electrons to flow from the emitter to the collector. The collector current is dependent on the amount of current flowing through the base.

The PH3134-30S transistor is used in various applications, including radio frequency, broadband and mobile communications, sound amplification and switching. In radio frequency applications, it is ideal because of its stability, high gain and low noise level. It is also used in television receivers and transmitters, as well as multimedia and satellite signal amplifiers. This type of transistor is also used in switching applications, where its high breakdown voltage and fast switching speed make it advantageous.

Overall, the PH3134-30S transistor is a reliable and beneficial device for many different RF applications. Its wide frequency range and high linearity make it an ideal choice for a variety of applications. Its low power consumption and high breakdown voltage make it an efficient device, while its ability to perform in extreme temperatures makes it a highly reliable device.

The specific data is subject to PDF, and the above content is for reference

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