PH3134-55L Allicdata Electronics
Allicdata Part #:

1465-1202-ND

Manufacturer Part#:

PH3134-55L

Price: $ 235.53
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: TRANSISTOR BIPOLAR 3.10-3.40GHZ
More Detail: RF Transistor NPN 65V 6.5A 55W Chassis Mount
DataSheet: PH3134-55L datasheetPH3134-55L Datasheet/PDF
Quantity: 1000
20 +: $ 214.11500
Stock 1000Can Ship Immediately
$ 235.53
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: --
Noise Figure (dB Typ @ f): --
Gain: 7.5dB
Power - Max: 55W
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Current - Collector (Ic) (Max): 6.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: --
Supplier Device Package: --
Description

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PH3134-55L Application Field and Working Principle

The PH3134-55L is a low-voltage high-frequency enhancement-mode field-effect transistor (FET). It is designed for switch and amplifier applications, where a low input and low on-resistance is required, and is commonly used in RF amplification. This article will explain the application field and working principle of the PH3134-55L.

PH3134-55L Application Field

The PH3134-55L is a low-voltage high-frequency transistor typically used in RF applications, such as radio frequency amplifiers, filters and oscillators. The PH3134-55L is particularly well suited to these types of applications due to its low gate-source capacitance, low gate-drain capacitance, and low gate-source resistance. The low voltage ratings of the PH3134-55L also make it a suitable choice as a switch, due to its low noise and low capacitance values.

The PH3134-55L is also suitable for use in other applications, such as CMOS digital circuitry, analog circuits, and power supplies. The device is well suited for use in power converters, which can benefit from its wide operating temperature range, high output voltage tolerance, and low junction capacitance.

PH3134-55L Working Principle

The PH3134-55L is an enhancement-mode FET, meaning that it does not require external biasing for operation. Its operation is based on the principle of minority carrier injection. The device consists of two semiconductor regions, a source and a drain, separated by an insulated gate. A voltage applied to the gate creates an electric field, which acts to modulate the current flow between the source and the drain. In the absence of a gate voltage, the device is off and no current flows.

When the gate voltage is increased, the electric field creates a channel of charge carriers in the semiconductor region between the source and the drain. As the gate voltage increases, the current between the source and the drain increases, and the device is said to be in saturation. The device can be turned off by reducing the gate voltage to zero.

Conclusion

The PH3134-55L is a low-voltage, high-frequency enhancement-mode field-effect transistor designed for switch and amplifier applications. It is commonly used in RF amplification and is also suitable for use in other application such as CMOS digital circuitry, analog circuits and power supplies. The PH3134-55L works on the principle of minority carrier injection, and can be switched on and off by changing the gate voltage.

The specific data is subject to PDF, and the above content is for reference

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