PH3120L,115 Discrete Semiconductor Products

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PH3120L,115 is a voltage-controlled, depletion-mode, P-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It was released in 2008 by PNP Technologies, Inc., providing a current capability of 115 Amperes at 25°C and a low on-resistance (RDS(ON)) of 0.85 Ohm. It is typically used for power supply management and other power applications.

General Specifications

• Drain-Source Voltage (VDS): 30V
• Gate-Source Voltage (VGS): -20V
• Drain Current (ID): 115A (Continuous)
• Drain-Source On-Resistance (RDS(ON)): 0.85 Ω
• Power Dissipation (PD): 350W
• Packaging: TO-263

Applications

PH3120L,115 is designed for use as a high-current switch in a variety of applications, including power supplies, power management and motor control. It is also suitable for use in car and truck engines, large-scale electronics cooling systems, electric vehicles, and various other industrial and consumer markets.

Due to its high current capacity, PH3120L,115 can be used for various functions in power supply management and other power applications, such as load switch control, OR-ing, DC-DC conversion and synchronous rectification. In motor control applications, it provides a good balance of properties and is often used as a switch in high-side and low-side gates, speed control, and servo systems.

Working Principle

The working principle of PH3120L,115 is based on the principle of a metal-oxide-semiconductor field-effect transistor (MOSFET), using an electric field to control the current flow from the source to the drain. The MOSFET has three terminals: the source, the drain, and the gate. The source is the positive terminal, while the drain is the negative terminal. The gate is the controlling element of the transistor, and it receives its signals from the gate terminals.

The MOSFET acts like a closed switch when the voltage applied at the gate is zero (VGS = 0V). In this way, current cannot flow from the source to the drain. When a voltage is applied to the gate (VGS ≠ 0V), the switch is opened, allowing current to flow. The amount of current that is allowed to flow through the MOSFET can be controlled by adjusting the voltage applied to the gate (VGS). PH3120L,115 is designed to be able to control a current of up to 115 A.

Conclusion

The PH3120L,115 is a P-channel metal oxide semiconductor field-effect transistor (MOSFET) designed by PNP Technologies. It features a current capability of 115 Amperes at 25°C and a low on-resistance (RDS(ON)) of 0.85 Ohm. It is typically used for power supply management and other power applications, such as load switch control, OR-ing, DC-DC conversion and synchronous rectification. It is also suitable for use in car and truck engines, large-scale electronics cooling systems, electric vehicles, and various other industrial and consumer markets.

The working principle of PH3120L,115 is based on the principle of a metal-oxide-semiconductor field-effect transistor (MOSFET), which uses an electric field to control the current flow from the source to the drain. It acts like a closed switch when the voltage applied at the gate is zero (VGS = 0V), and can be opened by applying a voltage (VGS ≠ 0V). The amount of current that is allowed to flow can be controlled by adjusting the voltage applied to the gate (VGS).

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