PHC2300,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1544-2-ND |
Manufacturer Part#: |
PHC2300,118 |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N/P-CH 300V 8SOIC |
More Detail: | Mosfet Array N and P-Channel 300V 340mA, 235mA 1.6... |
DataSheet: | PHC2300,118 Datasheet/PDF |
Quantity: | 7500 |
2500 +: | $ 0.22093 |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Last Time Buy |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 300V |
Current - Continuous Drain (Id) @ 25°C: | 340mA, 235mA |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 6.24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 102pF @ 50V |
Power - Max: | 1.6W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
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.The PHC2300/118 is an integrated circuit in the category of transistors, FETs, MOSFETs and arrays. The integrated circuit is designed to amplify both audio and video signals. It is typically used in audio applications such as home theatre systems, but can also be deployed in video applications such as DVD players and flat-screen TVs.The PHC2300/118 is made up of three primary components: a metal-oxide semiconductor field-effect transistor (MOSFET), a metal-oxide substrate transistor (MOST), and a P-channel Field-Effect Accumulating Transistor (PFET). The combination of these three components makes the PHC2300/118 a highly efficient amplifier. Due to its compact size, it is an ideal solution for applications that require a small footprint.The PHC2300/118 is characterized by a low on-resistance which helps reduce power consumption and provides higher efficiency than many amplifiers. It also has a wide bandwidth and a wide input voltage range which allows it to amplify signals with frequencies up to 1 MHz. Additionally, it has low distortion and wide temperature operating range, making it ideal for applications such as high-end audio systems and video applications.The MOSFET component of the PHC2300/118 is composed of two layers of silicon. The gate layer is composed of N+ type material and the substrate layer is composed of P+ type material. The MOSFET is responsible for amplifying the input signal by switching the current flow between the two layers.The MOST component of the PHC2300/118 is composed of three layers of silicon material. The gate is formed from N+ material and the substrate is made from P+ material. Additionally, a second layer of material is added on top of the substrate, this layer is known as a charge-acquiring layer and is responsible for improving the performance of the device.The PFET component is composed of three layers of silicon material; the gate is composed of N+ material and the substrate is made from P+ material. The PFET component is primarily responsible for providing the current flow to the output amplifier.In summary, the PHC2300/118 is a highly efficient integrated circuit that is suited for many audio and video applications. Its low on-resistance and wide bandwidth make it a great choice for applications that require amplification with high efficiency. Its wide input voltage range allows the device to be used in both AC and DC applications. The combination of its MOSFET, MOST, and PFET components make it an incredibly powerful device and a great choice for audio and video applications.
The specific data is subject to PDF, and the above content is for reference
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