Allicdata Part #: | PIMD2,115-ND |
Manufacturer Part#: |
PIMD2,115 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS NPN/PNP PREBIAS 0.6W 6TSOP |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | PIMD2,115 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03969 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 5V |
Base Part Number: | MD2 |
Supplier Device Package: | 6-TSOP |
Package / Case: | SC-74, SOT-457 |
Mounting Type: | Surface Mount |
Power - Max: | 600mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 22 kOhms |
Resistor - Base (R1): | 22 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A PIMD2115 is an array type of pre-biased bipolar transistor. It has two separate and independent elements, each with its own emitter, collector and base pins. The PIMD2115 is designed to minimize signal distortion due to cross coupling between the two element structures. This is achieved by adding additional resistive and capacitive elements which act as buffer stages and provide high isolation between the two elements.
The PIMD2115 is suitable for a wide range of applications, including audio amplifiers, signal processing, analog and mixed signal circuits, computer peripheral I/O, video signal processing, and RF systems. Its ability to provide high current gains, high input and output impedances, wide frequency response, wide temperature range and low noise makes it particularly suitable for applications in the frequency range from DC to up to a few hundred MHz.
In terms of its operating principle, the PIMD2115 consists of two bipolar junction transistors (BJTs). The two elements are biased independently and connected in series. The emitter of the first element is connected to the base of the second transistor, while the collector of the second element is connected to the base of the first element. This creates a current flow between the two elements which is proportional to the applied input signal. The resistance of the two elements is selected such that the output current of the PIMD2115 is determined by the current levels at each element. The output current from the device is then used to drive a load or a signal processor such as an amplifier or a filter.The PIMD2115 has many advantages over other types of pre-biased bipolar transistors. Not only is it relatively inexpensive, but it also offers a wide range of features. It offers high current gains, wide frequency response, wide temperature range and low noise. Furthermore, its two element design allows for high isolation between the elements, thus reducing cross couplings and distortions. Furthermore, its dual nature allows it to be used in applications such as those requiring high current gains, such as audio amplifiers, video signal processing, and computer peripheral I/O.
In conclusion, the PIMD2115 is a highly versatile device that can be used in a wide range of applications ranging from simple audio amplifiers to complex video signal processing. Its two separate and independent elements, in addition to its relatively low cost and high current gains, make it a very attractive choice for many applications. Furthermore, its wide temperature range, low noise and wide frequency response make it a particularly suitable device for RF systems. As such, the PIMD2115 can be an ideal solution for many different electronic applications.
The specific data is subject to PDF, and the above content is for reference
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