PIMH9,115

DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 5mA, 5V
Base Part Number:	PIMH9
Supplier Device Package:	6-TSOP
Package / Case:	SC-74, SOT-457
Mounting Type:	Surface Mount
Power - Max:	600mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	1µA
Vce Saturation (Max) @ Ib, Ic:	100mV @ 250µA, 5mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PIMH9,115, a pre-biased array bipolar junction transistor (BJT), is an integrated circuit that can switch relatively large amounts of current from one terminal to another. Its robust, low-impedance characteristics and pin layout make it ideal for digital power switching applications, such as DC/DC converters and solid-state relays. The PIMH 9,115 is a popular choice for many design projects due to its multiple advantages.The PIMH9,115 is an NPN silicon epitaxial transistor and is built with an integrated structure of 10 conduction channels. The integrated structure ensures a high current gain comparable to traditional BJTs, while also providing superior temperature stability, frequency switching capability and power dissipation. This is further enhanced by its compatibility with a variety of voltage and temperature ranges.The PIMH9,115 has two main parts, the base and the emitter. The base is the junction of two semiconductors which allows the switching of current, while the emitter is an electrode that releases the current. The emitter and base junctions are pre-biased, meaning they already have an electric field along them, which helps to minimize the effects of junction capacitance and allows for high-speed switching. To operate the PIMH9,115, a small current is sent through the base. This current causes electrons to move from the emitter to the base, generating a current from the other side of the base, leading to further current flow from the emitter. This process is repeated until a steady state is reached, establishing a “flow” of current from the emitter to the collector. The amount of current generated at the collector is determined by the amount of current coming through the base, thus providing a way of controlling current flow through the PIMH9,115.The PIMH9,115 is well suited to a variety of power switching applications, as it can switch sizable currents in a very short amount of time. It is also designed to be compatible with a variety of voltage and temperature ranges, allowing it to fit into existing systems with minimal adaptation. Through its pre-biased emitter and base junctions, it offers superior temperature stability, frequency switching capability and power dissipation capabilities. In addition, its integrated 10 conduction channels offer a high current gain and make the PIMH9,115 an ideal choice for many design projects.

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