PLZ11B-G3/H Allicdata Electronics
Allicdata Part #:

PLZ11B-G3/HGITR-ND

Manufacturer Part#:

PLZ11B-G3/H

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 11V 500MW DO219AC
More Detail: Zener Diode 11V 500mW ±3% Surface Mount DO-219AC (...
DataSheet: PLZ11B-G3/H datasheetPLZ11B-G3/H Datasheet/PDF
Quantity: 1000
4500 +: $ 0.03499
9000 +: $ 0.03043
13500 +: $ 0.02586
31500 +: $ 0.02434
112500 +: $ 0.02029
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 11V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: DO-219AC
Supplier Device Package: DO-219AC (microSMF)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The PLZ11B-G3/H diode is a single-junction zener diode that offers exceptional electrical stability and reliable performance. It is designed for a variety of applications operating at up to 1.2 amperes (A) in forward conduction and up to 200 A in reverse breakdown mode. This device also provides superior temperature stability, which ensures its consistent operation over wide temperature ranges.



The PLZ11B-G3/H diode is an ideal solution for numerous applications in consumer electronics, telecommunications, medical equipment, and testing equipment. In consumer electronics it is used in power supply circuits, DC-DC converters, audio amplifiers, and cellular base station communication.



In addition to its wide variety of applications, the device also features a low profile package and superior electrical characteristics. It has a maximum forward voltage of 1.2 V, a maximum reverse voltage of 200 V, and a maximum power dissipation of 500 mW. The diode features a low-capacitance protection mode that helps prevent over-voltage damage. It also provides excellent leakage current performance, which makes it ideal for high-reliability applications.



The key principle behind the operation of the PLZ11B-G3/H diode is the zener breakdown. This phenomenon occurs when a zener diode is reverse biased up to a certain voltage. Once this voltage is reached, the diode will break down and allow current to flow in the reverse direction. This current is called zener current, and it serves as a regulated voltage source. The reverse current is regulated by controlling the voltage of the diode, which can range from 0.5V to 200V.



The diode also features a built-in protection mode that allows the device to recover from an over-voltage. When the reverse voltage exceeds the maximum breakdown voltage, the diode will provide enhanced performance when protected by the built-in protection diodes. This protection, along with its low forward voltage, helps to ensure safe and reliable operation of the diode, even in harsh environments.



In summary, the PLZ11B-G3/H diode is a versatile device that offers superior performance and reliable operation in a variety of applications. It is designed for applications operating up to 1.2A in forward conduction and up to 200A in reverse breakdown mode. It also provides excellent temperature stability and superior electrical characteristics, such as a maximum forward voltage of 1.2V, a maximum reverse voltage of 200V, and a maximum power dissipation of 500mW. Finally, the device’s built-in protection mode ensures safe and reliable operation, even in extreme environmental conditions.

The specific data is subject to PDF, and the above content is for reference

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