PLZ4V3A-HG3/H Allicdata Electronics
Allicdata Part #:

PLZ4V3A-HG3/HGITR-ND

Manufacturer Part#:

PLZ4V3A-HG3/H

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 4.165V 960MW DO219AC
More Detail: Zener Diode 4.17V 960mW ±3% Surface Mount DO-219AC...
DataSheet: PLZ4V3A-HG3/H datasheetPLZ4V3A-HG3/H Datasheet/PDF
Quantity: 1000
4500 +: $ 0.03499
9000 +: $ 0.03043
13500 +: $ 0.02586
31500 +: $ 0.02434
112500 +: $ 0.02029
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101, PLZ
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.17V
Tolerance: ±3%
Power - Max: 960mW
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Supplier Device Package: DO-219AC (microSMF)
Description

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Diodes, such as Zener Diodes and Single Diodes, are used in a wide range of applications. PLZ4V3A-HG3/H Diodes, belonging to Zener and Single Diodes, is one such kind of diode. This specific diode was developed to provide protection from voltage spikes in various applications. Furthermore, it is particularly robust and reliable. This article will discuss the application field and working principle of PLZ4V3A-HG3/H Diodes.

PLZ4V3A-HG3/H diodes are mainly used in power supply applications. They provide protection to power supplies from over-voltage transients and high-voltage transients. This protection is essential for sensitive power supplies as it prevents them from being damaged due to voltage spikes. The diode also helps to efficiently reduce the harmful radiations caused by such transients.

The PLZ4V3A-HG3/H diode is composed of silicon PIN structure. It is an ultra-fast diode which helps to provide the required protection for power supplies in the shortest possible time. It is a full-wave rectifying diode and can switch from blocking state to conducting state depending on the incoming voltage. It has a low breakdown voltage of 4.3V and a forward voltage drop of about 0.4V.

The working principle of the PLZ4V3A-HG3/H diode is based on the principle of conduction. When the voltage across the diode is low, it maintains its blocked state and no current flows through it. When the voltage increases above the breakdown voltage, the diode quickly switches to its conducting state and allows current to flow through it. In this conducting state, the diode will conduct current in both directions, depending on the polarity of the applied voltage. The diode quickly returns to its blocking state when the voltage is reduced below the breakdown voltage.

Moreover, the PLZ4V3A-HG3/H diode also has a very low leakage current and a high peak power rating. It is very resistant to temperature and is capable of withstanding the high temperature fluctuations in power supplies. Due to its low power consumption and fast switching time, it is an ideal choice for power supplies and other applications where there is a need for protection from voltage spikes.

In conclusion, the PLZ4V3A-HG3/H diode is an ultra-fast, highly reliable, and low power consuming diode. It is mainly used in power supplies and other related applications to provide protection from over-voltage transients and high-voltage transients. It is composed of a silicon PIN structure and works on the principle of conduction. The diode has a low breakdown voltage of 4.3V and a forward voltage drop of about 0.4V. It is capable of providing fast, reliable, and efficient protection from voltage spikes and other harmful radiation from transients.

The specific data is subject to PDF, and the above content is for reference

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