PLZ4V3C-HG3/H

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The PLZ4V3C-HG3/H is a Pb-free, single Zener diode from Panasonic that is designed to be used in a variety of applications and operating under a range of conditions. This versatile device features a low leakage, low forward voltage drop and a high reliable Zener voltage preventing potential device failure arising from variations in temperature, power and operation.

The diode’s construction consists of two layers of P-type and N-type silicon for increased efficiency in dissipating power and dissipating noise. The P-type layer provides a junction between the N-type layer and terminal length. This junction also serves as the reverse breakdown voltage point.

For its application field, the PLZ4V3C-HG3/H is principally used in ESD protection circuits and in many industrial, automotive, and commercial electronics. This diode is also used in a range of regulators, and circuits that involve an input voltage exceeding the value of the output voltage. An example could be, using the diode as a back-up power supply regulator, so that the output voltage is always maintained to a safe level even if the main power supply stops supplying electricity.

The working principle of the PLZ4V3C-HG3/H is based on its Zener breakdown voltage principle. When a reverse voltage is applied, the electric field produced by it in the PN junction is strong enough that it creates a strong electric current flowing in the reverse direction.

This electric current is widely known as Zener breakdown, and the Zener breakdown voltage is the voltage at which the device starts to conduct its full reverse current. The device has a fixed breakdown voltage which is not influenced by the current passing through it.

In conclusion, the PLZ4V3C-HG3/H is a single Zener diode from Panasonic featuring a low leakage, a low forward voltage drop, and high reliable Zener voltage. It is typically used in applications associated with ESD protection, voltage regulators and circuits when the input voltage exceeds that of the output voltage. It works based on its zener breakdown voltage principle, where it generates a reverse current when a reverse voltage is applied to its PN junction.

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