PLZ5V6A-G3/H Allicdata Electronics
Allicdata Part #:

PLZ5V6A-G3/HGITR-ND

Manufacturer Part#:

PLZ5V6A-G3/H

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 5.415V 960MW DO219AC
More Detail: Zener Diode 5.42V 960mW ±2.49% Surface Mount DO-21...
DataSheet: PLZ5V6A-G3/H datasheetPLZ5V6A-G3/H Datasheet/PDF
Quantity: 18000
4500 +: $ 0.03195
9000 +: $ 0.02778
13500 +: $ 0.02362
31500 +: $ 0.02223
112500 +: $ 0.01852
Stock 18000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101, PLZ
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.42V
Tolerance: ±2.49%
Power - Max: 960mW
Impedance (Max) (Zzt): 13 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Supplier Device Package: DO-219AC (microSMF)
Description

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Diodes - Zener - Single

PLZ5V6A-G3/H Application Field and Working Principle

Zener diodes are a type of diode designed to operate in the reverse-breakdown region while offering improved temperature stability and greater power handling capabilities than other conventional power diodes. The PLZ5V6A-G3/H diode is an example of such a device and is widely used in applications such as overvoltage protection and voltage regulation.

A Zener diode is an electronic component that has two terminals, a cathode and an anode. The anode is electrically connected to the positive terminal of the circuit, and the cathode to the negative terminal. When a reverse-biased voltage is applied to the diode, the current flow is initially very low. Over time, however, the electric field within the diode causes a number of valence electrons—electrons with a high binding energy—to jump across the junction barrier. This process of impacting valence electrons being accelerated across the junction is known as Zener breakdown. Once this occurs, current begins to flow through the diode.

When the voltage applied to the diode is greater than the Zener voltage, the electric field in the junction region becomes considerably stronger, resulting in a spike in the current through the diode. This spike in current leads to the formation of a double layer of excess charge carriers at the diode’s junction. This double layer of charge carriers, combined with the electric field, forms a non-linear conductivity that allows for current to continue to flow even when the applied junction voltage is greater than the Zener voltage.

The PLZ5V6A-G3/H diode is a Zener diode with a nominal plateau breakdown voltage of 5.6V at a current level of 10mA. It is constructed of glass passivated junction transistors, offering excellent temperature stability and long-term reliability. This diode has an operating temperature range of -65°C to +175°C and can handle up to 150 volts in reverse biased mode. It is also designed to survive voltage transients up to 8V higher than the specified peak reverse voltage.

PLZ5V6A-G3/H Zener diodes are typically used in the construction of high-voltage power supplies, providing surge protection and regulation for the circuit. The device can also be employed in high-voltage rectification and peak clipping applications, especially in high-efficiency, high-current circuits. In addition, the diode can be employed as a voltage limiter. When connected in series with a load, the Zener will ensure that the voltage seen by the load is clamped to the Zener voltage.

The PLZ5V6A-G3/H diode has been designed for applications that require a reliable, high-performance zener diode. This device combines excellent power handling capabilities, temperature stability and long-term reliability, making it an excellent choice for a wide range of applications, including overvoltage protection, voltage regulation, rectification, peak clipping and voltage limiting.

The specific data is subject to PDF, and the above content is for reference

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