PLZ5V6C-G3/H

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Diodes - Zener - Single

This article will focus on the application field and working principle of the PLZ5V6C-G3/H zener diode, a single junction diode structure specialized in voltage regulation/stabilization. By understanding the working mechanism of PLZ5V6C-G3/H zener diode, we would be better informed of its most ideal applications and improve its performance beyond its intended use.

Electrical Characteristics

The PLZ5V6C-G3/H diode is a 3.6V, 5W surface mount device with a low power dissipation, high surge capability and high ESD protection. It’s maximum reverse current is 7mA, the maximum forward voltage is 1.55V and the power dissipation of the transistor is 5W. The device also contains a built-in clamping circuit, which helps stabilise the reverse voltage.

Application Field

The PLZ5V6C-G3/H diode can operate in the temperature range -55 to +125deg.C and has a wide range of applications. It is commonly used as a voltage reference in power supplies and in shunt or series regulator circuits. This diode can also be used in automotive systems, in low voltage drop, linear or switching power supply circuits, in variable voltage regulator circuits and as a freewheeling device in switching circuits.

In addition, this device can also be used as a shunt or series regulator in ac to dc converters and in other sensitive analog circuit as a voltage regulator. It can also be used as an ESD protection device in automotive and medical electronics.

Working Principle

The PLZ5V6C-G3/H diode can be described by the following diagram. It is a p-n junction diode which consists of two layers of semiconductors, a p-type and an n-type, which together make up the diode body. The p-type layer has an excess of holes, while the n-type layer has an excess of electrons. The two layers are connected together by an ohmic contact and form a p-n junction.

When the device is forward-biased, current flows through the diode in a certain direction, and the voltage drop across the diode is limited to the forward bias of the diode. This means that the voltage across the diode does not increase significantly above this bias level. However, when the device is reverse-biased, the current is significantly reduced and the voltage across the diode will rise until the reverse breakdown voltage is reached.

The PLZ5V6C-G3/H diode also has a clamping circuit which helps to limit the voltage across the diode. This circuit works by detecting when the voltage across the diode reaches the zener breakdown voltage, and then limiting the current through the diode to prevent overvoltage. This helps to maintain the voltage across the diode at a constant level.

Advantages

The PLZ5V6C-G3/H diode has a number of advantages. It is a high temperature, low power dissipation device with good ESD protection. It has a built-in clamping circuit which helps to stabilise the reverse voltage and a low power dissipation. This makes it ideal for use in a variety of applications including voltage references and power supplies. It is also small in size, making it easier to install in cramped spaces.

Conclusion

The PLZ5V6C-G3/H diode is a single junction, low power dissipation device with a wide range of applications. It has a wide temperature range and a built-in clamping circuit for voltage regulation. It is also small in size and has good ESD protection. Its most ideal applications include voltage references, power supplies and shunt or series regulator circuits. By understanding the working mechanism of PLZ5V6C-G3/H zener diode, we would be better informed of its most ideal applications and improve its performance beyond its intended use.

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