PLZ6V8B-HG3/H Allicdata Electronics
Allicdata Part #:

PLZ6V8B-HG3/HGITR-ND

Manufacturer Part#:

PLZ6V8B-HG3/H

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 6.66V 960MW DO219AC
More Detail: Zener Diode 6.66V 960mW ±2.55% Surface Mount DO-21...
DataSheet: PLZ6V8B-HG3/H datasheetPLZ6V8B-HG3/H Datasheet/PDF
Quantity: 1000
4500 +: $ 0.03499
9000 +: $ 0.03043
13500 +: $ 0.02586
31500 +: $ 0.02434
112500 +: $ 0.02029
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101, PLZ
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.66V
Tolerance: ±2.55%
Power - Max: 960mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 3.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-219AC
Supplier Device Package: DO-219AC (microSMF)
Description

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Diodes - Zener - Single

PLZ6V8B-HG3/H is a type of single Zener diode, a semiconductor device which is generally used in electrical circuits as a type of protection against transient voltages or in power regulation. This device has a maximum power dissipation of 600mW and a peak reverse current of 1uA.

Application Field

The PLZ6V8B-HG3/H diode is typically used in voltage regulation and raw circuit protection applications. It can be used, for example, as an overvoltage protection device in power supplies, or to protect against reverse current flow and overcurrent when used in series with other components. It can also be used to protect sensitive circuits from high voltage spikes, surges and transients. This diode has a maximum reverse voltage rating of 6V, and therefore prevents the circuit being higher than 6V.

Working Principle

The Zener diode works by allowing current to flow in a forward direction and blocking current in a reverse direction, up to its rated “breakdown” or “Zener” voltage, Vz. The device is constructed in such a way that a "depletion zone" is formed in the PN junction between the two semiconductor material. When reverse bias voltages above the breakdown voltage are applied, a voltage drop will be established between the anode and cathode, allowing current to flow from anode to cathode.

Under steady state bias conditions, the reverse current flowing through the device is limited only by the applied voltage and the device’s dynamic impedance. At other times, the reverse current is restricted by the dynamic impedance and the Zener diode\'s internal resistance, or “impedance”. This impedance is related to the physical characteristics of the diode and its forward biasing characteristics.

When the diode experiences a sudden increase in forward current, or a “transient”, the reverse voltage voltage drop quickly increases. This rapid increase in voltage causes a larger increase in inverse current. The increased inverse current quickly restores the pre-existing voltage balance.

In summary, the PLZ6V8B-HG3/H Zener diode is a versatile semiconductor device which is used in a range of applications for protection and regulation. It prevents voltages above its breakdown voltage to protect sensitive electrical circuits, and is also used to maintain steady-state voltage variations.

The specific data is subject to PDF, and the above content is for reference

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