PLZ9V1A-HG3/H

Series:	Automotive, AEC-Q101, PLZ
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	8.51V
Tolerance:	±2.59%
Power - Max:	960mW
Impedance (Max) (Zzt):	8 Ohms
Current - Reverse Leakage @ Vr:	500nA @ 6V
Voltage - Forward (Vf) (Max) @ If:	900mV @ 10mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	DO-219AC
Supplier Device Package:	DO-219AC (microSMF)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The PLZ9V1A-HG3/H is a single, Zener diode and is just one of many models in this range of components. The metal-oxide semiconductor diode, commonly known as the Zener diode, is a vital semiconductor device that regulates the voltage potential in electronic circuits.Zener diodes are nonlinear devices in which the junction behaves differently when a current is applied in the forward or reverse direction. It is a two-terminal device consisting of a p-type and n-type semiconductor material.

Application field

The PLZ9V1A-HG3/H is a single, Zener diode used in various fields ranging from telecommunications to military and space industries.The Zener diode, when installed in a constant current source, serves to regulate the voltage across its terminals. This can be used in various applications, such as voltage regulation, voltage clamping, and voltage switching.The Zener diode is also used in a variety of circuit protection applications. This includes overvoltage protection, transient overvoltage protection, inrush current protection, and ESD protection.The PLZ9V1A-HG3/H provides an excellent balance between low leakage current and tight regulation of the Zener voltage at the operating temperature range.

Working Principle

The PLZ9V1A-HG3/H is a single, Zener diode whose operation is based on the principle of reverse bias breakdown.The reverse bias breakdown is the same phenomena that occurs in a standard diode when its reverse voltage exceeds the peak inverse voltage (PIV). However, in the case of the Zener diode, the breakdown voltage (Vz) can be adjusted to a lower value through its manufacturing process. When a reverse bias is applied to the PLZ9V1A-HG3/H, the external electric field increases and approaches the breakdown voltage. When this voltage is reached, an avalanche current breakdown occurs, causing the voltage across the diode terminals to drop. The breakdown voltage of the diode is a function of its static and dynamic parameters. In the event of a reverse voltage spike, the diode will activate expanding its dynamic protections to reduce negative spikes. The Zener diode also benefits from its low reverse leakage current which eliminates the need for additional overvoltage protections.

Conclusion

The PLZ9V1A-HG3/H is a single, Zener diode used in a variety of applications, with a regulation voltage adjustable during its manufacturing process. The Zener diode is applied in the fields of telecommunications, military, and space and in protection applications, by regulating voltage across its terminals and clamping voltage spikes due to its low reverse leakage current, avalanche current breakdown, and dynamic protections.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description